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author:

Liu, Ming (Liu, Ming.) [1] | Xu, Zhitong (Xu, Zhitong.) [2] | Zhang, Guangan (Zhang, Guangan.) [3]

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EI

Abstract:

Micro-scratch responses of diamond-like carbon (DLC) films deposited with different dopants (i.e., Si, Cr, and H) were investigated by Rockwell C diamond indenter under progressive normal load linearly increasing from 5 mN to 15 N. Three critical loads can be identified from residual scratch morphology according to different periodic and symmetrical damage patterns. The results under small loads show: The addition of H can enhance normal contact and residual hardness of DLC films. Fracture toughness of both film and film/substrate system can be quantified by scratch-based linear elastic fracture mechanics. H-DLC film exhibits the smallest fracture toughness, and Si-DLC and Cr-DLC films have larger fracture toughness and critical loads than pure DLC film. © 2022, ASM International.

Keyword:

Carbon films Diamond like carbon films Diamonds Fracture mechanics Fracture toughness Silicon

Community:

  • [ 1 ] [Liu, Ming]Fujian Provincial Key Laboratory of Terahertz Functional Devices and Intelligent Sensing, School of Mechanical Engineering and Automation, Fuzhou University, Qishan Campus, Fujian, Fuzhou; 350116, China
  • [ 2 ] [Xu, Zhitong]Fujian Provincial Key Laboratory of Terahertz Functional Devices and Intelligent Sensing, School of Mechanical Engineering and Automation, Fuzhou University, Qishan Campus, Fujian, Fuzhou; 350116, China
  • [ 3 ] [Zhang, Guangan]State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou; 730000, China
  • [ 4 ] [Zhang, Guangan]Institute of Nanomaterials Application Technology, Gansu Academy of Science, Lanzhou; 730000, China
  • [ 5 ] [Zhang, Guangan]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China

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Source :

Journal of Materials Engineering and Performance

ISSN: 1059-9495

Year: 2023

Issue: 13

Volume: 32

Page: 6092-6106

2 . 2

JCR@2023

2 . 2 0 0

JCR@2023

ESI HC Threshold:49

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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