The　miniaturization　of　Micro-LED　devices　presents　a　series　of　challenges，including　size　effects，high-speed　mass　transfer，and　high-density　bonding　between　light-emitting　devices　and　driving　backplanes.　In　this　paper，an　alternating　current（AC）-driven　non-electric　contact（NEC）GaN-based　Micro-LED　device　was　prepared　by　metal　organic　chemical　vapor　deposition（MOCVD）and　atomic　layer　deposition（ALD）and　its　photoelectric　characteristics　were　also　investigated.　The　results　indicate　that　the　circuit　model　of　NEC　Micro-LED　devices　can　be　represented　by　an　equivalent　RC　circuit.　The　equivalent　impedance　initially　decreases　rapidly　and　then　stabilizes　with　increasing　AC-driven　signal　frequency.　When　the　signal　frequency　keeps　constant，the　current-voltage（I-V）curves　exhibit　linear　relationships　and　the　equivalent　impedance　remains　stable.　The　luminance　increases　continuously　with　increasing　working　voltage.　When　the　driving　voltage　remains　constant，the　luminance　of　the　device　initially　rises　and　then　falls　with　the　gradual　increase　in　frequency，reaching　a　maximum　luminance　in　the　frequency　range　of　16-22　MHz.　Additionally，the　luminescence　of　the　device　is　delayed　and　there　is　a　current　leading　effect　due　to　the　capacitive　property　of　the　circuit.　Compared　with　the　traditional　Micro-LED　devices，the　NEC　Micro-LED　devices　have　nonelectrical　contact　with　external　electrodes　and　the　luminescence　of　devices　is　attributed　to　inherent　charge　carriers　under　AC　driving　conditions.　This　development　offers　a　promising　solution　to　the　technical　challenges　from　the　miniaturization　of　Micro-LED　devices.　©　2023　Chines　Academy　of　Sciences.　All　rights　reserved.