Ultra-wide　bandgap　semiconductors　are　frequently　utilized　materials　in　the　fabrication　of　deep　ultraviolet　photodetectors　(DUVPDs).　However,　it　is　imperative　to　enhance　both　the　photoresponsivity　and　response　speed　of　these　detectors.　Herein,　we　deposited　high-quality　(111)-oriented　ZnGa　2　O　4　films　with　a　bandgap　of　approximately　4.75　eV　onto　c　-plane　sapphire　(0001)　substrates　using　magnetron　sputtering.　Our　findings　illuminate　the　pivotal　role　of　pressure　in　shaping　their　structural　properties,　chemical　compositions,　and　photoelectric　characteristics.　Importantly,　DUVPDs　based　on　ZnGa　2　O　4　films　exhibited　a　photo/dark　current　ratio　of　1.46　x　10　4　.　Furthermore,　we　observed　the　highest　responsivity　to　be　72.2　A/W,　complemented　by　a　photodetectivity　of　4.21　x　10　14　Jones,　an　external　quantum　efficiency　of　4.04　x　10　4　%,　and　rise　and　decay　times　of　2.32　s　and　0.055　s,　respectively.　This　study　underscores　the　commendable　photoresponsivity　and　rapid　response　time　of　the　ZnGa　2　O　4　photodetector,　positioning　it　as　a　compelling　candidate　for　the　advancement　of　deep　ultraviolet　devices.