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author:

Yu, Q. (Yu, Q..) [1] | Feng, S. (Feng, S..) [2] | Yu, J. (Yu, J..) [3] (Scholars:俞金玲) | Cheng, S. (Cheng, S..) [4] (Scholars:程树英) | Lai, Y. (Lai, Y..) [5] (Scholars:赖云锋) | Chen, Y. (Chen, Y..) [6] | He, K. (He, K..) [7]

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Scopus

Abstract:

Helicity-dependent photocurrent (HDPC) and its modulation in topological insulator Bi2Te3 nanowires have been investigated. It is revealed that when the incident plane of a laser is perpendicular to the nanowire, the HDPC is an odd function of the incident angle, which is mainly contributed by the circular photogalvanic effect originating from the surface states of Bi2Te3 nanowire. When the incident plane of a laser is parallel to the nanowire, the HDPC is approximately an even function of the incident angle, which is due to the circular photon drag effect coming from the surface states. It is found that the HDPC can be effectively tuned by the back gate and the ionic liquid top gate. By analyzing the substrate dependence of the HDPC, we find that the HDPC of the Bi2Te3 nanowire on the Si substrate is an order of magnitude larger than that on SiO2, which may be due to the spin injection from the Si substrate to the Bi2Te3 nanowire. In addition, by applying different biases, the Stokes parameters of a polarized light can be extracted by arithmetic operation of the photocurrents measured in the Bi2Te3 nanowire. This work suggests that topological insulator Bi2Te3 nanowires may provide a good platform for opto-spintronic devices, especially in chirality and polarimtry detection. © 2024 American Chemical Society.

Keyword:

Bi2Te3 Nanowires Helicity Dependent Photocurrent Ionic Liquid Gating Stokes Parameter Detection Substrates

Community:

  • [ 1 ] [Yu Q.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 2 ] [Feng S.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 3 ] [Yu J.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 4 ] [Yu J.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Jiangsu, Changzhou, 213164, China
  • [ 5 ] [Cheng S.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 6 ] [Lai Y.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 7 ] [Chen Y.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 8 ] [Chen Y.]College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 9 ] [He K.]Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing, 100084, China

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Source :

ACS Applied Materials and Interfaces

ISSN: 1944-8244

Year: 2024

Issue: 30

Volume: 16

Page: 40297-40308

8 . 5 0 0

JCR@2023

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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