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author:

Yu, Qin (Yu, Qin.) [1] | Feng, Shizun (Feng, Shizun.) [2] | Yu, Jinling (Yu, Jinling.) [3] (Scholars:俞金玲) | Cheng, Shuying (Cheng, Shuying.) [4] (Scholars:程树英) | Lai, Yunfeng (Lai, Yunfeng.) [5] (Scholars:赖云锋) | Chen, Yonghai (Chen, Yonghai.) [6] | He, Ke (He, Ke.) [7]

Indexed by:

EI Scopus SCIE

Abstract:

Helicity-dependent photocurrent (HDPC) and its modulation in topological insulator Bi2Te3 nanowires have been investigated. It is revealed that when the incident plane of a laser is perpendicular to the nanowire, the HDPC is an odd function of the incident angle, which is mainly contributed by the circular photogalvanic effect originating from the surface states of Bi2Te3 nanowire. When the incident plane of a laser is parallel to the nanowire, the HDPC is approximately an even function of the incident angle, which is due to the circular photon drag effect coming from the surface states. It is found that the HDPC can be effectively tuned by the back gate and the ionic liquid top gate. By analyzing the substrate dependence of the HDPC, we find that the HDPC of the Bi2Te3 nanowire on the Si substrate is an order of magnitude larger than that on SiO2, which may be due to the spin injection from the Si substrate to the Bi2Te3 nanowire. In addition, by applying different biases, the Stokes parameters of a polarized light can be extracted by arithmetic operation of the photocurrents measured in the Bi2Te3 nanowire. This work suggests that topological insulator Bi2Te3 nanowires may provide a good platform for opto-spintronic devices, especially in chirality and polarimtry detection.

Keyword:

Bi2Te3 Nanowires Helicity DependentPhotocurrent Ionic Liquid Gating Stokes ParameterDetection Substrates

Community:

  • [ 1 ] [Yu, Qin]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 2 ] [Feng, Shizun]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 3 ] [Yu, Jinling]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 4 ] [Cheng, Shuying]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 5 ] [Lai, Yunfeng]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 6 ] [Chen, Yonghai]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 7 ] [Chen, Yonghai]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 8 ] [He, Ke]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
  • [ 9 ] [Yu, Jinling]Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolat Sci & En, Changzhou 213164, Jiangsu, Peoples R China

Reprint 's Address:

  • [Yu, Jinling]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China;;[Yu, Jinling]Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolat Sci & En, Changzhou 213164, Jiangsu, Peoples R China;;

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2024

Issue: 30

Volume: 16

Page: 40297-40308

8 . 5 0 0

JCR@2023

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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