The Impact of Defects on the Performance of Micro-LED Devices: A Simulation Study - Details

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Abstract：

In　order　to　evaluate　the　influence　of　defects　on　the　performance　of　Micro-LED　devices,　this　paper　adopts　a　finite　element　simulation　method　based　on　semiconductor　physics.　Firstly,　a　simulation　model　of　Micro-LED　devices　is　established,　including　key　components　such　as　electrodes,　materials,　and　structures.　Then,　defect　parameters　are　set　to　simulate　the　optical　properties　of　Micro-LED　devices.　Finally,　by　comparing　the　simulation　results　with　or　without　introducing　deep　level　defects,　the　influence　law　of　these　defects　on　the　optical　output　and　electrical　characteristics　of　Micro-LED　devices　was　revealed.　©　2024　John　Wiley　and　Sons　Inc.　All　rights　reserved.

Keyword：

Defects Finite element method Gallium nitride III-V semiconductors Light emitting diodes Optical properties

Community：

[ 1 ] [Ye, Jinyu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 2 ] [Zhou, Xiongtu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 3 ] [Zhou, Xiongtu]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350116, China
[ 4 ] [Zhanga, Yongai]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350116, China
[ 5 ] [Wu, Chaoxing]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 6 ] [Wu, Chaoxing]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350116, China
[ 7 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 8 ] [Guo, Tailiang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350116, China
[ 9 ] [Yan, Qun]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 10 ] [Yan, Qun]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350116, China

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ISSN： 0097-966X

Year： 2024

Issue： S1

Volume： 55

Page： 1332-1334

Language： English

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 1

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