In　order　to　evaluate　the　influence　of　defects　on　the　performance　of　Micro‐LED　devices,　this　paper　adopts　a　finite　element　simulation　method　based　on　semiconductor　physics.　Firstly,　a　simulation　model　of　Micro‐LED　devices　is　established,　including　key　components　such　as　electrodes,　materials,　and　structures.　Then,　defect　parameters　are　set　to　simulate　the　optical　properties　of　Micro‐LED　devices.　Finally,　by　comparing　the　simulation　results　with　or　without　introducing　deep　level　defects,　the　influence　law　of　these　defects　on　the　optical　output　and　electrical　characteristics　of　Micro‐LED　devices　was　revealed.