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In order to evaluate the influence of defects on the performance of Micro-LED devices, this paper adopts a finite element simulation method based on semiconductor physics. Firstly, a simulation model of Micro-LED devices is established, including key components such as electrodes, materials, and structures. Then, defect parameters are set to simulate the optical properties of Micro-LED devices. Finally, by comparing the simulation results with or without introducing deep level defects, the influence law of these defects on the optical output and electrical characteristics of Micro-LED devices was revealed. © 2024 John Wiley and Sons Inc. All rights reserved.
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ISSN: 0097-966X
Year: 2024
Issue: S1
Volume: 55
Page: 1332-1334
Language: English
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ESI Highly Cited Papers on the List: 0 Unfold All
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30 Days PV: 1
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