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author:

Ye, J. (Ye, J..) [1] | Zhou, X. (Zhou, X..) [2] (Scholars:周雄图) | Zhanga, Y. (Zhanga, Y..) [3] | Wu, C. (Wu, C..) [4] (Scholars:吴朝兴) | Guo, T. (Guo, T..) [5] (Scholars:郭太良) | Yan, Q. (Yan, Q..) [6]

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EI Scopus

Abstract:

In order to evaluate the influence of defects on the performance of Micro-LED devices, this paper adopts a finite element simulation method based on semiconductor physics. Firstly, a simulation model of Micro-LED devices is established, including key components such as electrodes, materials, and structures. Then, defect parameters are set to simulate the optical properties of Micro-LED devices. Finally, by comparing the simulation results with or without introducing deep level defects, the influence law of these defects on the optical output and electrical characteristics of Micro-LED devices was revealed. © 2024 John Wiley and Sons Inc. All rights reserved.

Keyword:

Defects Finite element simulation Gallium nitride Micro-LED Photoelectric properties

Community:

  • [ 1 ] [Ye J.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Zhou X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 3 ] [Zhou X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350116, China
  • [ 4 ] [Zhanga Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350116, China
  • [ 5 ] [Wu C.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 6 ] [Wu C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350116, China
  • [ 7 ] [Guo T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 8 ] [Guo T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350116, China
  • [ 9 ] [Yan Q.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 10 ] [Yan Q.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350116, China

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ISSN: 0097-966X

Year: 2024

Issue: S1

Volume: 55

Page: 1332-1334

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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