1.　55　μm　high　power　laser　diodes　are　widely　used　in　long-distance　optical　communication　networks，un⁃　manned　driving，and　other　fields.　The　higher　output　power　of　the　laser　can　effectively　increase　the　transmission　dis⁃　tance　and　improve　the　signal-to-noise　ratio　of　the　system.　As　the　rapid　development　of　photonic　integration　and　co-packaged　optics，high　optical　and　electrical　integration　density　requires　lasers　to　have　low　power　consumption　perfor⁃　mance.　By　optimizing　the　p-type　profile　and　epi-growth　of　the　laser　epi-wafer，the　series　resistance　of　the　lasers　at　room　temperature　was　reduced　from　3.　2　Ω　to　2.　2　Ω，and　the　electrical　power　consumption　was　decreased　from　510　mW　to　430　mW，at　a　current　of　300　mA.　The　resistance　of　the　laser　is　better　than　the　device　prepared　by　the　for⁃　eign　company　epi-wafer　with　the　same　structure.　The　taper　waveguide　was　further　adopted　to　increase　the　gain　vol⁃　ume　of　the　lasers.　The　results　show　that　the　taper　structure　increased　the　laser　output　power　by　more　than　17%，while　the　electrical　power　of　the　device　did　not　increase　significantly.　The　highest　photoelectric　conversion　efficiency　of　the　device　at　room　temperature　and　low　current　is　close　to　50%，which　is　comparable　to　the　results　reported　in　related　studies.　The　far　field　results　show　that　the　lateral　divergence　angle　of　the　laser　is　effectively　reduced，and　the　beam　quality　of　the　device　does　not　change　significantly.　The　experimental　results　provide　a　research　basis　for　low　power　consumption　high-power　semiconductor　lasers　for　optoelectronic　integrated　applications.　©　2024　Editorial　Office　of　Chinese　Optics.　All　rights　reserved.