Login | Cas Login
English| 简体中文| 繁体中文

  • Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

Advanced Search

author：

Zhang, Dongqi (Zhang, Dongqi.) [1] | Tao, Tao (Tao, Tao.) [2] | Zhi, Ting (Zhi, Ting.) [3] | Zhuang, Zhe (Zhuang, Zhe.) [4] | Xu, Feifan (Xu, Feifan.) [5] | Sang, Yimeng (Sang, Yimeng.) [6] | Yu, Junchi (Yu, Junchi.) [7] | Yan, Yu (Yan, Yu.) [8] | Tian, Kangkai (Tian, Kangkai.) [9] | Zhang, Zi-Hui (Zhang, Zi-Hui.) [10] | Zhang, Jiachen (Zhang, Jiachen.) [11] | Liu, Bin (Liu, Bin.) [12]

Indexed by：

EI

Abstract：

The　alternating　current　(ac)-driven　GaN-based　single　contact　light-emitting　diode　(SC-LED)　has　garnered　significant　attention　due　to　its　unique　driving　technique　and　potential　applications,　especially　in　areas　where　direct　current-driven　(dc-driven)　LEDs　face　limitations.　Our　previous　research　emphasizes　the　importance　of　reducing　the　operating　voltage　of　SC-LED.　In　this　study,　we　have　developed　and　manufactured　a　novel　SC-LED　featuring　a　tunnel　junction　(TJ)　structure,　which　exhibits　a　lower　breakdown　voltage　(Vbreakdown)　compared　to　conventional　LEDs　with　an　ITO　contact　layer.　The　simulation　and　experimental　data　illustrate　a　significant　performance　gap　between　TJ　SCLED　and　ITO　SC-LED.　The　working　voltage　of　TJ　SC-LED　is　34　V,　which　is　29%　lower　than　that　of　ITO　SC-LED.　Specifically,　under　ac　power　at　80　V,　TJ　SC-LED　exhibits　a　current　of　0.94　mA　and　a　WPE　of　3.22%,　both　higher　than　the　0.77　mA　and　3.02%　values　recorded　for　the　ITO　SC-LED.　This　comparison　underscores　the　superior　per-formance　of　TJ　SC-LED　over　ITO　SC-LED.　These　findings　enhance　our　understanding　of　SC-LEDs　and　pave　the　way　for　the　advancement　of　new　driving　techniques　in　nanosized　displays.　©　1963-2012　IEEE.

Keyword：

Gallium nitride III-V semiconductors Junction gate field effect transistors Light emitting diodes PIN diodes Tunnel diodes Wide band gap semiconductors

Community：

  • [ 1 ] [Zhang, Dongqi]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing; 210093, China
  • [ 2 ] [Tao, Tao]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing; 210093, China
  • [ 3 ] [Zhi, Ting]Nanjing University of Posts and Telecommunications, College of Electronic and Optical Engineering, Nanjing; 210023, China
  • [ 4 ] [Zhuang, Zhe]Nanjing University, School of Integrated Circuits, Suzhou; 215163, China
  • [ 5 ] [Xu, Feifan]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing; 210093, China
  • [ 6 ] [Sang, Yimeng]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing; 210093, China
  • [ 7 ] [Yu, Junchi]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing; 210093, China
  • [ 8 ] [Yan, Yu]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing; 210093, China
  • [ 9 ] [Tian, Kangkai]Guangdong University of Technology, School of Integrated Circuits, Guangdong, Guangzhou; 510006, China
  • [ 10 ] [Zhang, Zi-Hui]Guangdong University of Technology, School of Integrated Circuits, Guangdong, Guangzhou; 510006, China
  • [ 11 ] [Zhang, Jiachen]Minjiang University, International Digital Economy College, Fuzhou; 350108, China
  • [ 12 ] [Zhang, Jiachen]Fuzhou University, College of Physics and Information Engineering, Fuzhou; 350108, China
  • [ 13 ] [Liu, Bin]Nanjing University, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing; 210093, China

Reprint 's Address：

Email：

Show more details

Related Keywords：

Related Article：

Source ：

IEEE Transactions on Electron Devices

ISSN： 0018-9383

Year： 2024

Issue： 9

Volume： 71

Page： 5546-5551

2 . 9 0 0

JCR@2023

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 1

Affiliated Colleges：

Get Fulltext

DOI Library Discovery Baidu Scholar Search Engineering Village
Online/Total：117/10043222
Address：FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code：350116) Contact Us：0591-22865326
Copyright：FZU Library Technical Support：Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1