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author:

Chen, Can (Chen, Can.) [1] | Yu, Jinling (Yu, Jinling.) [2] (Scholars:俞金玲) | Kang, Chen (Kang, Chen.) [3] | Chen, Yonghai (Chen, Yonghai.) [4] | Lai, Yunfeng (Lai, Yunfeng.) [5] (Scholars:赖云锋) | Cheng, Shuying (Cheng, Shuying.) [6] (Scholars:程树英)

Indexed by:

EI Scopus SCIE

Abstract:

Chiral metasurfaces with high quality factors (Q-factors) are a promising platform for achieving chiral optical responses. However, the optical properties of most metasurfaces are fixed once they are fabricated. Here, we study the effect of phase-change material Ge2Sb2Te5 (GST) on the chiral optics of a planar chiral Si metasurface driven by bound states in the continuum (BICs), as the refractive index of the phase-change material changes before and after the phase change. The planar chiral silicon metasurface is capable of generating near-unity (0.99) circular dichroism and giant (0.996) linear dichroism in the infrared region. Notably, phase-change material GST is integrated into the Z-shaped Si metasurfaces. We actively tune the dissipative loss by causing the GST to undergo a phase transition, thereby modulating the optical chirality. In addition, we numerically simulate the effect of the thickness of the phase-change layer and the embedded position on the optical response. Compared with single-functional metasurfaces, this device exhibits better flexibility and more functionalities. It is demonstrated that the optical chirality of the metasurface can be well controlled using the phase-change material GST. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.

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Community:

  • [ 1 ] [Chen, Can]Fuzhou Univ, Sch Adv Mfg, Quanzhou 362251, Peoples R China
  • [ 2 ] [Yu, Jinling]Fuzhou Univ, Sch Adv Mfg, Quanzhou 362251, Peoples R China
  • [ 3 ] [Kang, Chen]Fuzhou Univ, Sch Adv Mfg, Quanzhou 362251, Peoples R China
  • [ 4 ] [Yu, Jinling]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Lai, Yunfeng]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Cheng, Shuying]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Chen, Yonghai]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 8 ] [Cheng, Shuying]Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolat Sci & En, Changzhou 213164, Peoples R China

Reprint 's Address:

  • [Yu, Jinling]Fuzhou Univ, Sch Adv Mfg, Quanzhou 362251, Peoples R China;;[Yu, Jinling]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China;;

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Source :

APPLIED OPTICS

ISSN: 1559-128X

Year: 2024

Issue: 29

Volume: 63

Page: 7682-7691

1 . 7 0 0

JCR@2023

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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