Near-eye　displays　(NEDs)　with　the　ability　to　sense　environmental　optical　information　are　crucial　for　immersive　human-environment-　interactive　technologies,　which　require　a　device　brightness　of　more　than　25,000　cd/m2.　Quantum　dot　light-emitting　diodes　(QLEDs)　are　a　promising　candidate　for　such　high-bright　NEDs.　However,　the　efficiency　roll-off　behavior　at　high　brightness　severely　limits　their　application.　Here,　we　report　a　universal　hole-injection-　enhanced　strategy　to　boost　the　external　quantum　efficiency　(EQE)　of　QLEDs　to　19.4%　at　an　ultra-high　brightness　of　40,158　cd/m2.　The　device　consistently　maintains　an　efficiency　of　more　than　17%　over　a　considerably　high　brightness　range　(3,461-118,327　cd/m2).　These　major　advances　are　due　to　enhanced　hole　injection　by　using　Sn-doped　inorganic　phosphomolybdate　(Sn:PMA)　material　as　the　hole　injection　layer.　The　strategy　is　demonstrated　to　be　widely　suitable　for　various　NED　devices,　such　as　organic　LEDs　(OLEDs)　and　perovskite　LEDs　(Pe-LEDs).