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Abstract:
Micro light-emitting diode (Micro-LED) displays have been considered promising candidate for reaching the augmented/virtual reality (AR/VR) display technology. However, it's challenging to attain the display application with ultra-high PPI (pixel per inch) and larger panel size in virtue of the difficulties of chip fabrication and subsequent bonding process. In this paper, we demonstrated a 0.7-inch active-matrix (AM) monolithic blue Micro-LED display integrated with silicon-based complementary metal oxide semiconductor (CMOS) driver by indium bump bonding. The display features a full high-definition (FHD) resolution of 1920 × 1080, a pixel pitch of 8 μm, and a PPI of 3175. Key fabrication processes were investigated experimentally including self-alignment etching of mesa, elevation of the cathode to match the anode height, and preparation of uniform Micro-bumps array. The blue Micro-LED display exhibits excellent electrical and optical characteristic with a low forward voltage of 3.45 V. Moreover, a 3D model of integrated Micro-LED-CMOS was built by theoretical simulation and the finite element analysis was employed to evaluate the reliability of the heterogeneous integration. Finally, we illustrated the great prospect of the fabricated Micro-LED as the light engine for lightweight AR and spatial light field display. © 2024 Elsevier Ltd
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Materials Science in Semiconductor Processing
ISSN: 1369-8001
Year: 2025
Volume: 188
4 . 2 0 0
JCR@2023
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ESI Highly Cited Papers on the List: 0 Unfold All
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30 Days PV: 3
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