Artificial　synaptic　devices　are　the　hardware　foundation　of　modern　computing　systems　which　have　shown　great　potential　in　overcoming　the　bottleneck　of　traditional　von-Neumann　computing　architectures.　Organic　synaptic　transistors　have　garnered　considerable　attention　due　to　their　merits,　such　as　low　cost,　low　weight,　and　mechanical　flexibility.　Various　materials　are　utilized　for　the　charge-capture　layer　in　organic　synaptic　transistors.　Indium　gallium　zinc　oxide　(IGZO)　is　a　typical　metal　oxide　semiconductor　with　a　wide　bandgap,　high　carrier　mobility,　and　stable　characteristics.　Moreover,　IGZO　is　an　n-type　semiconductor　with　a　lower　highest　occupied　molecular　orbital　(HOMO)　and　lowest　unoccupied　molecular　orbital　(LUMO)　energy　level　compared　to　p-type　semiconductor,　which　has　great　potential　as　a　capture　material　to　fabricate　high-performance　synaptic　devices.　However,　the　application　of　IGZO　as　the　trapping　layer　in　organic　synaptic　transistors　has　received　limited　attention.　Consequently,　an　organic　synaptic　transistor　based　on　organic/inorganic　heterojunction　was　developed.　The　impact　of　program/erase　time　on　memory　performance　was　investigated,　revealing　that　the　memory　window　and　memory　ratio　increased　as　the　write/erase　time　was　extended.　Additionally,　typical　synaptic　behavior　were　successfully　emulated,　including　excitatory/inhibitory　postsynaptic　current,　paired-pulse　facilitation,　paired-pulse　depression,　high-pass　filtering　characteristics,　and　the　transformation　of　short-term　plasticity　to　long-term　plasticity.　Notably,　the　synaptic　transistor　based　on　an　inorganic-organic　bilayer　heterojunction　achieved　a　high　recognition　accuracy　of　89.2%　using　the　Modified　National　Institute　of　Standards　and　Technology　dataset　for　handwritten　digit　training.　This　study　provides　a　facile　route　for　fabricating　high-performance　synaptic　transistors,　paving　the　way　for　the　development　of　advanced　brain-like　computers.