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author：

Wang, K. (Wang, K..) [1] | Ye, J. (Ye, J..) [2] | Su, W. (Su, W..) [3] | Lin, Y. (Lin, Y..) [4] | Zhou, X. (Zhou, X..) [5] | Lin, J. (Lin, J..) [6] | Guo, T. (Guo, T..) [7] | Wu, C. (Wu, C..) [8] | Zhang, Y. (Zhang, Y..) [9]

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Scopus

Abstract：

The　driving　capability　of　Micro-LED　displays　based　on　thin　film　transistor　(TFT)　often　falls　short　due　to　limited　TFT　current　output　performance.　In　this　study,　we　propose　a　6T2C　pixel　circuit　for　micro　light-emitting-triode　(Micro-LET),　which　integrates　GaN-based　LED　and　bipolar　junction　transistor　(BJT)　in　a　single　chip　vertically.　The　proposed　pixel　circuit,　utilizing　low-temperature　polysilicon　(LTPS)　TFT,　effectively　compensates　for　threshold　voltage　shifts　and　mobility　variations,　thereby　addressing　the　issue　of　pixel　non-uniformity.　Circuit　simulation　results　demonstrate　that　the　current　error　rates　(CER)　of　the　emission　current　are　less　than　4.71　%　and　1.83　%,　respectively,　when　subjected　to　±0.5　V　threshold　voltage　change　and　±30　%　mobility　variation.　Furthermore,　the　LTPS　TFT　can　be　extended　to　amorphous　silicon　(a-Si)　TFT　in　the　pixel　circuit,　showcasing　its　potential　in　enabling　high-brightness　Micro-LED　displays　driven　by　a-Si　TFT　technology　with　current　amplification　capabilities.　These　findings　validate　the　feasibility　of　cost-effective　and　highly　luminous　Micro-LED　displays　while　also　alleviating　concerns　regarding　overcapacity　issues　associated　with　a-Si　TFT.　©　2025　Elsevier　Ltd

Keyword：

a-Si TFT LTPS TFT Micro-LED Mobility variations Pixel circuit Threshold voltage

Community：

  • [ 1 ] [Wang K.]School of Advanced Manufacturing, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Ye J.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 3 ] [Su W.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 4 ] [Lin Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 5 ] [Zhou X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 6 ] [Zhou X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 7 ] [Lin J.]School of Advanced Manufacturing, Fuzhou University, Fuzhou, 350108, China
  • [ 8 ] [Guo T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 9 ] [Guo T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 10 ] [Wu C.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 11 ] [Wu C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 12 ] [Zhang Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 13 ] [Zhang Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China

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Source ：

Microelectronics Journal

ISSN： 0959-8324

Year： 2025

Volume： 158

1 . 9 0 0

JCR@2023

CAS Journal Grade：3

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 1

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