The　driving　capability　of　Micro-LED　displays　based　on　thin　film　transistor　(TFT)　often　falls　short　due　to　limited　TFT　current　output　performance.　In　this　study,　we　propose　a　6T2C　pixel　circuit　for　micro　light-emitting-triode　(Micro-LET),　which　integrates　GaN-based　LED　and　bipolar　junction　transistor　(BJT)　in　a　single　chip　vertically.　The　proposed　pixel　circuit,　utilizing　low-temperature　polysilicon　(LTPS)　TFT,　effectively　compensates　for　threshold　voltage　shifts　and　mobility　variations,　thereby　addressing　the　issue　of　pixel　non-uniformity.　Circuit　simulation　results　demonstrate　that　the　current　error　rates　(CER)　of　the　emission　current　are　less　than　4.71　%　and　1.83　%,　respectively,　when　subjected　to　+0.5　V　threshold　voltage　change　and　+30　%　mobility　variation.　Furthermore,　the　LTPS　TFT　can　be　extended　to　amorphous　silicon　(a-Si)　TFT　in　the　pixel　circuit,　showcasing　its　potential　in　enabling　high-brightness　Micro-LED　displays　driven　by　a-Si　TFT　technology　with　current　amplification　capabilities.　These　findings　validate　the　feasibility　of　cost-effective　and　highly　luminous　Micro-LED　displays　while　also　alleviating　concerns　regarding　overcapacity　issues　associated　with　a-Si　TFT.