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author:

Zhang, G. (Zhang, G..) [1] | Wang, H. (Wang, H..) [2] | Qin, S. (Qin, S..) [3] | Tang, J. (Tang, J..) [4] | Zeng, Z. (Zeng, Z..) [5] | Su, C. (Su, C..) [6] | Yi, X. (Yi, X..) [7] | Zhang, X. (Zhang, X..) [8] | Chen, H. (Chen, H..) [9]

Indexed by:

Scopus SCIE

Abstract:

The hierarchical processing capabilities of the human visual system can significantly enhance the efficiency of data processing in the central nervous system. Volatile and non-volatile devices are key components in simulating the central nervous system. Realizing both volatile and non-volatile functionalities on a single device is ideal; however, challenges such as complex preparation and cumbersome switching persist. In this study, a tunable synaptic transistor with volatile and non-volatile switching capabilities is developed, offering ease of fabrication and convenient switching. It can simulate various forms of synaptic plasticity and exhibits excellent storage performance in non-volatile mode. Finally, we design an image preprocessing and classification system based on visual selective attention, which enables efficient neuromorphic computation through hierarchical data processing.  © 2025 IEEE.

Keyword:

artificial synapse atomic layer deposition multilevel storage Multimode switching

Community:

  • [ 1 ] [Zhang G.]Fujian University of Technology, Research Center for Microelectronics Technology, Fuzhou, 350108, China
  • [ 2 ] [Wang H.]Fujian University of Technology, Research Center for Microelectronics Technology, Fuzhou, 350108, China
  • [ 3 ] [Qin S.]Fujian University of Technology, Research Center for Microelectronics Technology, Fuzhou, 350108, China
  • [ 4 ] [Tang J.]Fujian University of Technology, Research Center for Microelectronics Technology, Fuzhou, 350108, China
  • [ 5 ] [Zeng Z.]Fujian University of Technology, Research Center for Microelectronics Technology, Fuzhou, 350108, China
  • [ 6 ] [Su C.]Fujian University of Technology, Research Center for Microelectronics Technology, Fuzhou, 350108, China
  • [ 7 ] [Yi X.]Fujian University of Technology, Research Center for Microelectronics Technology, Fuzhou, 350108, China
  • [ 8 ] [Zhang X.]Fuzhou University, Institute of Optoelectronic Display, Fuzhou, 350002, China
  • [ 9 ] [Zhang X.]Fudan University, State Key Laboratory of ASIC and System, School of Microelectronics, Shanghai, 200433, China
  • [ 10 ] [Chen H.]Fuzhou University, Institute of Optoelectronic Display, Fuzhou, 350002, China
  • [ 11 ] [Chen H.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350002, China

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Source :

IEEE Electron Device Letters

ISSN: 0741-3106

Year: 2025

4 . 1 0 0

JCR@2023

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ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 1

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