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author:

Qiu, Jiawen (Qiu, Jiawen.) [1] | Li, Junlong (Li, Junlong.) [2] | Li, Wenhao (Li, Wenhao.) [3] | Wang, Kun (Wang, Kun.) [4] | Zhang, Shuqian (Zhang, Shuqian.) [5] | Suk, Chan Hee (Suk, Chan Hee.) [6] | Wu, Chaoxing (Wu, Chaoxing.) [7] (Scholars:吴朝兴) | Zhou, Xiongtu (Zhou, Xiongtu.) [8] (Scholars:周雄图) | Zhang, Yongai (Zhang, Yongai.) [9] (Scholars:张永爱) | Guo, Tailiang (Guo, Tailiang.) [10] (Scholars:郭太良) | Kim, Tae Whan (Kim, Tae Whan.) [11]

Indexed by:

EI Scopus SCIE

Abstract:

Neuromorphic computing, inspired by the highly interconnected and energy-efficient way the human brain processes information, has emerged as a promising technology for post-Moore's law era. This emerging technology can emulate the structures and the functions of the human brain and is expected to overcome the fundamental limitation of the current von Neumann computing architecture. Neuromorphic devices stand out as the key components of future electronic systems, exhibiting potential in shaping the landscape of neuromorphic computing. Especially, nanowire (NW)-based neuromorphic devices, with their advantages of high integration, high-speed computing, and low power consumption, have recently emerged as candidates for neuromorphic computing technology. Here, a critical overview of the current development and relevant research in the field of NW-based neuromorphic devices are provided. Neuromorphic devices based on different NW materials are comprehensively discussed, including Ag NW-based, organic NW-based, metal oxide NW-based, and semiconductor NW-based devices. Finally, as a foresight perspective, the potentials and the challenges of these NW-based neuromorphic devices for use as future brain-like electronics are discussed.

Keyword:

artificialneuron artificial synapse brain-like electronics nanowire nanowire network neuromorphic computing neuromorphic device synaptic plasticity

Community:

  • [ 1 ] [Qiu, Jiawen]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Li, Junlong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Li, Wenhao]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Wang, Kun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Zhang, Shuqian]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 8 ] [Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 9 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 10 ] [Suk, Chan Hee]Hanyang Univ, Dept Elect & Comp Engn, Seoul 04763, South Korea
  • [ 11 ] [Kim, Tae Whan]Hanyang Univ, Dept Elect & Comp Engn, Seoul 04763, South Korea
  • [ 12 ] [Wu, Chaoxing]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 13 ] [Zhou, Xiongtu]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 14 ] [Zhang, Yongai]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 15 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Kim, Tae Whan]Hanyang Univ, Dept Elect & Comp Engn, Seoul 04763, South Korea;;[Wu, Chaoxing]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China;;[Zhou, Xiongtu]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China;;[Zhang, Yongai]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China;;

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Source :

ACS NANO

ISSN: 1936-0851

Year: 2024

Issue: 46

Volume: 18

Page: 31632-31659

1 5 . 8 0 0

JCR@2023

Cited Count:

WoS CC Cited Count: 4

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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