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author:

Chen, Shaolin (Chen, Shaolin.) [1] | Huang, Yao (Huang, Yao.) [2] | Hu, Ping (Hu, Ping.) [3] | Xie, Xin (Xie, Xin.) [4] | Li, Shihan (Li, Shihan.) [5] | Yue, Wei (Yue, Wei.) [6] | Li, Yafeng (Li, Yafeng.) [7] | Wei, Mingdeng (Wei, Mingdeng.) [8]

Indexed by:

SCIE

Abstract:

Hybrid perovskite solar cells (PSCs) have emerged as a promising alternative to crystalline silicon solar cells, owing to their excellent photovoltaic characteristics and straightforward fabrication processes. However, the rapid crystallization dynamics frequently results in unfavorable film morphology, giving rise to a plethora of defect sites and fostering the formation of trapped non-radiative recombination centers, thus limiting the further advancement and refinement of PSC technology. In this study, we introduce N-benzoylthiourea (N-BzTu) molecules as a passivate agent within PSCs through anti-solvent additive approach. The incorporation of -C--O and -C--S functional groups in N-BzTu effectively passivates the under-coordinated Pb2+ defects, while the formation of robust hydrogen bonding interactions between -NH- or -NH2 groups and I- ions acts as a potent inhibitor against the generation of iodine vacancy defects. This dual-action mechanism not only addresses the issue of defect proliferation but also enhances the overall structural integrity of the PSC film. Moreover, by meticulously adjusting the growth rate of the perovskite crystals, we can achieve dense and uniformly distributed perovskite films. Specifically, the power conversion efficiency (PCE) of the optimized devices soared from 22.11 % to an impressive 24.05 %. Consequently, the hydrothermal stability of the device is also improved, with the initial efficiency of the unencapsulated device remaining above 80 % after 1540 h at 20-25 % relative humidity.

Keyword:

Anti-solvent additive engineer Crystal growth Defect passivation Hysteresis Perovskite

Community:

  • [ 1 ] [Chen, Shaolin]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Fuzhou 350116, Peoples R China
  • [ 2 ] [Huang, Yao]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Fuzhou 350116, Peoples R China
  • [ 3 ] [Hu, Ping]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Fuzhou 350116, Peoples R China
  • [ 4 ] [Xie, Xin]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Fuzhou 350116, Peoples R China
  • [ 5 ] [Li, Shihan]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Fuzhou 350116, Peoples R China
  • [ 6 ] [Yue, Wei]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Fuzhou 350116, Peoples R China
  • [ 7 ] [Li, Yafeng]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Fuzhou 350116, Peoples R China
  • [ 8 ] [Wei, Mingdeng]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Fuzhou 350116, Peoples R China
  • [ 9 ] [Li, Yafeng]Fuzhou Univ, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350002, Fujian, Peoples R China
  • [ 10 ] [Wei, Mingdeng]Fuzhou Univ, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350002, Fujian, Peoples R China

Reprint 's Address:

  • [Li, Yafeng]Fuzhou Univ, Fujian Key Lab Electrochem Energy Storage Mat, Fuzhou 350116, Peoples R China

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Source :

JOURNAL OF COLLOID AND INTERFACE SCIENCE

ISSN: 0021-9797

Year: 2025

Volume: 690

9 . 4 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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