Flexible　resistive　random-access　memory　(RRAM)　holds　significant　promise　for　data　storage　applications　in　the　realms　of　smart　healthcare　and　wearable　devices.　However,　most　research　has　focused　primarily　on　the　development　of　stretchable　electrodes,　frequently　neglecting　the　mechanical　compatibility　between　the　functional　layer　and　the　electrode.　Consequently,　the　advancement　of　intrinsically　stretchable　memristors　presents　a　substantial　challenge.　Herein,　a　glassy　metal-organic　framework　(MOF)　film　with　a　wrinkle　structure　is　integrated　with　a　pre-stretched　electrode　to　fabricate　intrinsically　stretchable　memristors.　These　devices　demonstrate　an　impressive　switching　ratio　of　up　to　105,　a　bending　radius　limit　of　10　mm,　and　a　strain　limit　of　20%,　all　while　maintaining　stable　switching　characteristics.　Furthermore,　conductive　atomic　force　microscope　(C-AFM)　and　focused　ion　beam　(FIB)　techniques　reveal　that　the　resistive　switching　effect　is　primarily　governed　by　the　silver　conductive　filament　mechanism.　This　work　successfully　developed　an　intrinsically　stretchable　memristor,　paving　the　way　for　the　application　of　MOFs　as　functional　layers　in　flexible　electronics.　It　is　expected　to　inspire　further　application　of　MOFs　in　the　design　of　high-performance,　flexible　electronic　technologies.