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author：

Zhuang, J. (Zhuang, J..) [1] | Jia, L. (Jia, L..) [2] | Lu, Y. (Lu, Y..) [3] | Zheng, Z. (Zheng, Z..) [4] | Li, T. (Li, T..) [5] | Zhu, S. (Zhu, S..) [6] | Xu, X. (Xu, X..) [7] | Wang, C. (Wang, C..) [8] | Zhang, H. (Zhang, H..) [9] | Zhu, M. (Zhu, M..) [10] | Lu, X. (Lu, X..) [11]

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Scopus

Abstract：

Conventional　Ga2O3-based　solar-blind　photodetectors　typically　require　a　high　bias　voltage　for　efficient　operation,　leading　to　significant　energy　consumption.　To　address　this,　we　propose　an　alternative　approach　using　MOCVD-grown　homoepitaxial　β-Ga2O3　thin　films　on　(100)　Sn-doped　β-Ga2O3　wafer　to　develop　photodetectors　with　ultra-low　bias　and　high　gain.　A　graphene/　Ga2O3　heterojunction　device　was　fabricated,　exhibiting　an　exceptionally　low　dark　current　of　0.1nA　and　a　photocurrent　ratio　of　104　at　−5　V,　along　with　a　suppression　ratio　(R254nm/R405nm)　of　1800　at　0　V.　By　leveraging　graphene＇s　carrier-carrier　scattering　and　Ga2O3′s　UV　absorption,　the　device　achieved　a　responsivity　increase　from　0.04　mA/W　(0　V)　to　30　mA/W　(−0.5　V),　equivalent　to　a　73944　%　enhancement,　while　the　detectivity　improved　by　1096　%,　reaching　2.68　×　1012　Jones.　This　work　provides　insights　into　the　development　of　highly　sensitive,　low-power　solar-blind　UV　photodetectors.　©　2025　Elsevier　Ltd

Keyword：

Detectivity Heterojunction Homoepitaxial Ga2O3 Responsivity Solar-blind photodetectors

Community：

  • [ 1 ] [Zhuang J.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Jia L.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 3 ] [Lu Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 4 ] [Zheng Z.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 5 ] [Li T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 6 ] [Li T.]FZU-Jinjiang Joint Institute of Microelectronics, School of Advanced Manufacturing, Jinjiang Science and Education Park, Fuzhou University, Jinjiang, 362200, China
  • [ 7 ] [Zhu S.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 8 ] [Xu X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 9 ] [Wang C.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 10 ] [Zhang H.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 11 ] [Zhang H.]FZU-Jinjiang Joint Institute of Microelectronics, School of Advanced Manufacturing, Jinjiang Science and Education Park, Fuzhou University, Jinjiang, 362200, China
  • [ 12 ] [Zhu M.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 13 ] [Zhu M.]FZU-Jinjiang Joint Institute of Microelectronics, School of Advanced Manufacturing, Jinjiang Science and Education Park, Fuzhou University, Jinjiang, 362200, China
  • [ 14 ] [Lu X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China

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Source ：

Optics and Laser Technology

ISSN： 0030-3992

Year： 2025

Volume： 192

4 . 6 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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