Quantum　dot　light-emitting　devices　(QLEDs)　exhibit　unique　advantages　for　high-resolution　display　applications.　However,　as　pixel　size　decreases,　challenges　including　insufficient　hole　injection　and　leakage　current　become　increasingly　pronounced,　resulting　in　significant　degradation　in　device　performance.　Herein,　dual　hole　injection　layers　are　constructed　by　self-assembly　of　an　organic　small　molecular　layer　on　conventional　PEDOT:PSS　to　smooth　the　potential　barrier,　thus　achieving　more　balanced　carrier　injection.　An　ultrafine　inter-pixel　isolation　structure　is　designed　as　a　charge　blocking　layer　surrounding　the　photolithograpic　pixels,　with　the　purpose　of　effectively　mitigating　leakage　current　in　the　non-emitting　region.　The　high-resolution　devices　show　a　high　external　quantum　efficiency　(EQE)　of　19.6　%　and　a　peak　power　efficiency　(PE)　of　20.63　lm/W,　both　of　which　significantly　exceed　the　performance　of　the　control　device　(EQE　=　14.6　%,　PE　=　10.54　lm/W).