ContextThis　study　systematically　investigates　the　growth　mechanism　of　nitrogen-doped　graphene　in　a　plasma　environment,　with　a　particular　focus　on　the　effects　of　temperature　and　hydrogen　radicals　on　its　structural　evolution.　The　results　reveal　that,　at　3000　K,　the　formation　of　nitrogen-doped　graphene　proceeds　through　three　stages:　carbon　chain　elongation,　cyclization,　and　subsequent　condensation　into　planar　structures.　During　this　process,　nitrogen　atoms　are　gradually　incorporated　into　the　carbon　network,　forming　various　doping　configurations　such　as　pyridinic-N,　pyrrolic-N,　and　graphitic-N.　An　increase　in　temperature　accelerates　the　reaction　kinetics　and　cluster　growth,　but　concurrently　reduces　the　stability　of　nitrogen　incorporation.　Hydrogen　radicals　play　a　dual　role:　they　help　maintain　the　planar　structure　and　suppress　the　curling　of　carbon　clusters;　however,　excessive　hydrogen　radicals　compete　for　edge-active　sites,　thereby　inhibiting　nitrogen　doping　efficiency.　This　work　provides　deeper　insight　into　the　growth　mechanism　of　nitrogen-doped　graphene　and　offers　theoretical　guidance　for　its　efficient　and　controllable　synthesis.MethodsIn　this　study,　we　employed　molecular　dynamics　(MD)　simulations　using　the　LAMMPS　software　package　combined　with　the　ReaxFF　reactive　force　field　to　systematically　investigate　the　growth　mechanism　of　nitrogen-doped　graphene　in　a　plasma　environment,　as　well　as　the　effects　of　temperature　and　hydrogen　radicals　on　its　structural　evolution.　All　simulations　were　performed　in　the　NVT　ensemble　with　a　time　step　of　0.1　fs　and　a　total　simulation　duration　of　15,000　ps.　To　reduce　variability　and　enhance　the　reliability　of　the　results,　each　simulation　was　carefully　repeated　three　times　under　identical　conditions　for　subsequent　statistical　analysis.