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author:

Li, Dianlun (Li, Dianlun.) [1] | Wu, Chaoxing (Wu, Chaoxing.) [2] (Scholars:吴朝兴) | Ruan, Lu (Ruan, Lu.) [3] | Wang, Jiaxin (Wang, Jiaxin.) [4] | Qiu, Zhirong (Qiu, Zhirong.) [5] | Wang, Kun (Wang, Kun.) [6] | Liu, Ye (Liu, Ye.) [7] | Zhang, Yufei (Zhang, Yufei.) [8] | Guo, Tailiang (Guo, Tailiang.) [9] (Scholars:郭太良) | Lin, Jintang (Lin, Jintang.) [10] (Scholars:林金堂) | Kim, Tae Whan (Kim, Tae Whan.) [11]

Indexed by:

EI Scopus SCIE

Abstract:

Zinc oxide (ZnO) acting as a versatile material for electronic and optoelectronic devices shows promising applications in triboelectric nanogenerator (TENG)-based self-powered electronics. However, the output performances of ZnO-based TENG are relatively low and the origin of contact-electrification in the ZnO-based TENG is unclear. Here, we fabricate a TENG by using ZnO film and polyimide (PI) acting as positive and negative friction layers, respectively. The work function of the ZnO film is modified by doping with elemental Al, and the conductivity of the ZnO film is additionally enhanced by the presence of graphene-oxide sheets. The output performance is greatly improved and it is sensitive to the work function of ZnO film. These results reveal that electron transfer is the dominant process in contact-electrification for ZnO-based TENGs. This work provides significant insight into understanding the contact-electrification properties of ZnO, thus allowing optimization of ZnO-based self-powered devices.

Keyword:

Aluminum-doped zinc oxide Contact-electrification Electron transfer Graphene oxide Triboelectric nanogenerators

Community:

  • [ 1 ] [Li, Dianlun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Ruan, Lu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Wang, Jiaxin]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Qiu, Zhirong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Wang, Kun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Liu, Ye]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 8 ] [Zhang, Yufei]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 9 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 10 ] [Lin, Jintang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 11 ] [Kim, Tae Whan]Hanyang Univ, Dept Elect & Comp Engn, Seoul 04763, South Korea

Reprint 's Address:

  • 吴朝兴 林金堂

    [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Lin, Jintang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Kim, Tae Whan]Hanyang Univ, Dept Elect & Comp Engn, Seoul 04763, South Korea

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Source :

NANO ENERGY

ISSN: 2211-2855

Year: 2020

Volume: 75

1 7 . 8 8 1

JCR@2020

1 6 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:196

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 56

SCOPUS Cited Count: 61

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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