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author:

Ma, Fumin (Ma, Fumin.) [1] | Zhu, Yangbin (Zhu, Yangbin.) [2] | Xu, Zhongwei (Xu, Zhongwei.) [3] (Scholars:徐中炜) | Liu, Yang (Liu, Yang.) [4] | Zheng, Xiaojing (Zheng, Xiaojing.) [5] | Ju, Songman (Ju, Songman.) [6] | Li, Qianqian (Li, Qianqian.) [7] | Ni, Ziquan (Ni, Ziquan.) [8] | Hu, Hailong (Hu, Hailong.) [9] (Scholars:胡海龙) | Chai, Yang (Chai, Yang.) [10] | Wu, Chaoxing (Wu, Chaoxing.) [11] (Scholars:吴朝兴) | Kim, Tae Whan (Kim, Tae Whan.) [12] | Li, Fushan (Li, Fushan.) [13] (Scholars:李福山)

Indexed by:

EI Scopus SCIE

Abstract:

Simulating the human brain for neuromorphic computing has attractive prospects in the field of artificial intelligence. Optoelectronic synapses have been considered to be important cornerstones of neuromorphic computing due to their ability to process optoelectronic input signals intelligently. In this work, optoelectronic synapses based on all-inorganic perovskite nanoplates are fabricated, and the electronic and photonic synaptic plasticity is investigated. Versatile synaptic functions of the nervous system, including paired-pulse facilitation, short-term plasticity, long-term plasticity, transition from short- to long-term memory, and learning-experience behavior, are successfully emulated. Furthermore, the synapses exhibit a unique memory backtracking function that can extract historical optoelectronic information. This work could be conducive to the development of artificial intelligence and inspire more research on optoelectronic synapses.

Keyword:

all-inorganic perovskite nanoplate artificial intelligence memory backtracking neuromorphic computing optoelectronic synapse

Community:

  • [ 1 ] [Ma, Fumin]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 2 ] [Zhu, Yangbin]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 3 ] [Xu, Zhongwei]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 4 ] [Liu, Yang]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 5 ] [Zheng, Xiaojing]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 6 ] [Ju, Songman]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 7 ] [Li, Qianqian]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 8 ] [Ni, Ziquan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 9 ] [Hu, Hailong]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 10 ] [Wu, Chaoxing]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 11 ] [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 12 ] [Chai, Yang]Hong Kong Polytech Univ, Hong Kong 999077, Peoples R China
  • [ 13 ] [Kim, Tae Whan]Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea

Reprint 's Address:

  • 李福山

    [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China;;[Kim, Tae Whan]Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea

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Source :

ADVANCED FUNCTIONAL MATERIALS

ISSN: 1616-301X

Year: 2020

Issue: 11

Volume: 30

1 8 . 8 0 8

JCR@2020

1 8 . 5 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:196

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 154

SCOPUS Cited Count: 155

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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