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author:

Zeng, Qunying (Zeng, Qunying.) [1] (Scholars:曾群英) | Xu, Zhongwei (Xu, Zhongwei.) [2] (Scholars:徐中炜) | Zheng, Congxiu (Zheng, Congxiu.) [3] | Liu, Yang (Liu, Yang.) [4] | Chen, Wei (Chen, Wei.) [5] (Scholars:陈伟) | Guo, Tailiang (Guo, Tailiang.) [6] (Scholars:郭太良) | Li, Fushan (Li, Fushan.) [7] (Scholars:李福山) | Xiang, Chaoyu (Xiang, Chaoyu.) [8] | Yang, Yixing (Yang, Yixing.) [9] | Cao, Weiran (Cao, Weiran.) [10] | Xie, Xiangwei (Xie, Xiangwei.) [11] | Yan, Xiaolin (Yan, Xiaolin.) [12] | Qian, Lei (Qian, Lei.) [13] | Holloway, Paul H. (Holloway, Paul H..) [14]

Indexed by:

EI Scopus SCIE

Abstract:

A solution-processed molybdenum oxide (MoOx) as the hole injection layer (HIL) by doctor-blade coating was developed to improve the efficiency and lifetime of red-emitting quantum-dot light-emitting diodes (QD-LEDs). It has been demonstrated that by adding isopropyl alcohol into the MoOx precursor during the doctor-blade coating process, the morphology, composition, and the surface electronic structure of the MoOx HIL could be tailored. A high-quality MoOx film with optimized charge injection was obtained, based on which all-solution-processed highly efficient red-emitting QD-LEDs were realized by using a low-cost doctor-blade coating technique under ambient conditions. The red QD-LEDs exhibited the maximum current efficiency and external quantum efficiency of 16 cd/A and 15.1%, respectively. Moreover, the lifetime of red devices initializing at 100 cd/m(2) was 3236 h under ambient conditions, which is about twice as long as those with a conventional poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) HIL. Large-area QD-LEDs with 4 in. emitting areas were fabricated with blade coating as well, which exhibit a high efficiency of 12.1 cd/A for red emissions. Our work paves a new way to the realization of efficient large-area QD-LEDs, and the processing and findings from this work can be expanded into next-generation lighting and flat-panel displays.

Keyword:

blade coating hole injection layer large-area lifetime molybdenum oxide quantum-dot light-emitting diodes

Community:

  • [ 1 ] [Zeng, Qunying]Fuzhou Univ, Fuzhou 350116, Fujian, Peoples R China
  • [ 2 ] [Xu, Zhongwei]Fuzhou Univ, Fuzhou 350116, Fujian, Peoples R China
  • [ 3 ] [Zheng, Congxiu]Fuzhou Univ, Fuzhou 350116, Fujian, Peoples R China
  • [ 4 ] [Liu, Yang]Fuzhou Univ, Fuzhou 350116, Fujian, Peoples R China
  • [ 5 ] [Chen, Wei]Fuzhou Univ, Fuzhou 350116, Fujian, Peoples R China
  • [ 6 ] [Guo, Tailiang]Fuzhou Univ, Fuzhou 350116, Fujian, Peoples R China
  • [ 7 ] [Li, Fushan]Fuzhou Univ, Fuzhou 350116, Fujian, Peoples R China
  • [ 8 ] [Xiang, Chaoyu]TCL Corp Res, Shenzhen 518052, Peoples R China
  • [ 9 ] [Yang, Yixing]TCL Corp Res, Shenzhen 518052, Peoples R China
  • [ 10 ] [Cao, Weiran]TCL Corp Res, Shenzhen 518052, Peoples R China
  • [ 11 ] [Xie, Xiangwei]TCL Corp Res, Shenzhen 518052, Peoples R China
  • [ 12 ] [Yan, Xiaolin]TCL Corp Res, Shenzhen 518052, Peoples R China
  • [ 13 ] [Qian, Lei]TCL Corp Res, Shenzhen 518052, Peoples R China
  • [ 14 ] [Holloway, Paul H.]Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

Reprint 's Address:

  • 李福山

    [Li, Fushan]Fuzhou Univ, Fuzhou 350116, Fujian, Peoples R China;;[Qian, Lei]TCL Corp Res, Shenzhen 518052, Peoples R China;;[Holloway, Paul H.]Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2018

Issue: 9

Volume: 10

Page: 8258-8264

8 . 4 5 6

JCR@2018

8 . 5 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:284

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 39

SCOPUS Cited Count: 40

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

Online/Total:198/10020010
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