Recently,　solution-processed　quantum　dot　light-emitting　diodes　(QLEDs)　have　emerged　as　a　promising　candidate　for　next-generation　lighting　and　display　devices.　However,　when　given　a　constant　voltage　or　current,　the　QLEDs　need　a　certain　working　time　to　reach　their　maximum　brightness.　Such　positive　aging　challenge,　dramatically　reducing　the　response　speed　of　the　device　and　causing　a　luminescence　delay,　is　urgent　to　be　investigated　and　resolved.　In　the　current　work,　we　introduce　a　charge-storage　layer　architecture　by　inserting　copper(I)　thiocyanate　(CuSCN)　between　the　organic　hole-injection　layer　and　hole-transport　layer.　The　extracted　holes　will　be　released　during　the　next　electrical　signal　stimulation　to　increase　the　efficiency　of　charge　transport.　As　a　result,　the　response　speed　of　the　QLEDs　is　improved　by　an　order　of　magnitude.　In　addition,　by　inserting　an　inorganic　CuSCN　layer,　the　efficiency,　lifetime,　and　environmental　stability　of　red/green/blue　full-color　QLEDs　are　enhanced　simultaneously.　Moreover,　this　work　provides　a　generic　strategy　for　the　fabrication　of　fast-response　and　high-efficiency　full-color　QLEDs　without　luminescence　delay,　which　plays　a　critical　role　in　the　practical　industrialization　of　QLEDs.