In　this　letter,　we　report　the　high-performance　quantum　dot　light-emitting　diodes　(QLEDs)　with　a　hybrid　hole　injection　layer　(HIL)　by　doping　MoOx　into　poly(3,4-ethylenedioxythiophene):　poly(styrene　sulfonate)　(PEDOT:PSS).　By　this　method,　the　Fermi　level　of　HIL　increases　from　4.9　to　5.3　eV,　allowing　better　energy　level　matching　and　more　efficient　hole　injection　capability.　The　resultant　devices　exhibit　maximum　current　efficiency　of　18.6　cd/A　and　peak　external　quantum　efficiency　of　18.2%,　almost　1.5-folds　higher　than　those　(12.7　cd/A　and　12.3　%)　of　the　control　device　based　on　pristine　PEDOT:PSS　HIL.　Most　importantly,　the　hydrophobicity　of　PEDOT:PSS　on　transparent　conductive　oxide　can　be　dramatically　improved　upon　MoOx　doping,　which　provides　promising　potential　in　ink-jet　printing　for　large-area　fabrication　of　devices.