Nonvolatile　memory　(NVM)　devices　based　on　a　metal-insulator-metal　structure　consisting　of　CdSe/ZnS　quantum　dots　embedded　in　polymethylsilsesquioxane　dielectric　layers　were　fabricated.　The　current-voltage　(I-V)　curves　showed　a　bistable　current　behavior　and　the　presence　of　hysteresis.　The　current-time　(I-t)　curves　showed　that　the　fabricated　NVM　memory　devices　were　stable　up　to　1　x　10(4)　s　with　a　distinct　ON/OFF　ratio　of　10(4)　and　were　reprogrammable　when　the　endurance　test　was　performed.　The　extrapolation　of　the　I-t　curve　to　10(5)　s　with　corresponding　current　ON/OFF　ratio　1　x　10(5)　indicated　a　long　performance　stability　of　the　NVM　devices.　Schottky　emission,　Poole-Frenkel　emission,　trapped-charge　limited-current　and　Child-Langmuir　law　were　proposed　as　the　dominant　conduction　mechanisms　for　the　fabricated　NVM　devices　based　on　the　obtained　I-V　characteristics.