Ag-doped　In2S3　(In2S3:Ag)　thin　films　have　been　deposited　onto　glass　substrates　by　a　thermal　evaporation　method.　Ag　concentration　is　varied　from　0　at.%　to　4.78　at.%.　The　structural,　optical,　and　electrical　properties　are　characterized　using　X-ray　diffraction　(XRD),　spectrophotometer,　and　Hall　measurement　system,　respectively.　The　XRD　analysis　confirms　the　existence　of　In2S3　and　AgIn5S8　phases.　With　the　increase　of　the　Ag　concentration,　the　band　gap　of　the　films　is　decreased　gradually　from　2.82　eV　to　2.69　eV　and　the　resistivity　drastically　is　decreased　from　similar　to　10(3)　to　5.478　x　10(-2)　Omega.cm.