Few-layer　graphene　with　average　thickness　of　3　monolayers　has　been　prepared　on　6H-SiC(0001)　via　annealing　in　argon　ambience.　The　surface　structure　and　morphology　are　characterized　by　reflection　high-energy　electron　diffraction,　Raman　spectroscopy　and　atomic　force　microscopy　(AFM).　Raman　mapping　measurement　reveals　that　the　graphene　layer　has　high　uniformity　in　doping　concentration　and　strains.　The　SiC　surface　after　graphitization　shows　steps　with　height?＜?9?nm,　and　graphene　grows　continuously　across　these　steps　to　form　large　domains.　AFM　phase　images　indicate　that　the　SiC　surface　is　completely　covered　by　graphene.　Copyright　(c)　2012　John　Wiley　&　Sons,　Ltd.