The　authors　proposed　a　simple　hot　phosphoric　etching　method　to　enhance　output　power　of　GaN-based　light-emitting　diodes　(LEDs)　by　34%.　By　immersing　the　sample　in　H3PO4　at　220　degrees　C　for　40　min,　it　was　found　that　debris　contaminants　induced　by　nanosecond　laser　scribing　could　be　effectively　removed.　It　was　also　found　that　the　hot　phosphoric　etching　method　will　not　degrade　electrical　characteristics　of　the　fabricated　LEDs.