Investigation on preparation of SnS film and its properties - Details

author：

Cheng, Shuying (Cheng, Shuying.) ^[1] (Scholars：程树英) | Huang, Cichang (Huang, Cichang.) ^[2] | Chen, Yanqing (Chen, Yanqing.) ^[3] | Chen, Guonan (Chen, Guonan.) ^[4] (Scholars：陈国南)

Indexed by：

EI Scopus PKU CSCD

Abstract：

Sn0.995S1.005　film　is　prepared　By　constant　current　cathodic　electro-deposition　under　the　conditions　of　pH=2.7,　Sn2+/S2O32-=1/5,　J=3.0　mA/cm2,　t=5　h.　The　film　is　characterized　with　XRD　and　SEM　analysis,　and　is　of　polycrystalline　with　orthorhombic　structure　with　grain　size　of　200-800　nm.　Its　direct　band　gap　is　estimated　to　be　1.23　eV　from　the　optical　measurement.　The　film　is　p-type　conductivity　with　an　electrical　resistivity　of　7.5　Ω·cm　measured　by　the　four-probe　method.

Keyword：

Electric properties Electrodeposition Grain size and shape Optical properties Semiconducting films Semiconducting tin compounds

Community：

[ 1 ] [Cheng, Shuying]Department of Chemistry, Fuzhou University, Fuzhou 350002, China
[ 2 ] [Cheng, Shuying]Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002, China
[ 3 ] [Huang, Cichang]Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002, China
[ 4 ] [Chen, Yanqing]Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002, China
[ 5 ] [Chen, Guonan]Department of Chemistry, Fuzhou University, Fuzhou 350002, China