In　this　paper,　the　impact　of　body　bias　on　hot　carrier　degradation　(HCD)　in　advanced　FinFET　devices　is　experimentally　investigated.　It　is　observed　that　the　degradation　of　Idsat　is　increasing　with　body　bias　for　the　short-channel　core　devices,　while　an　opposite　tendency　is　found　in　the　long-channel　IO　devices.　The　different　dependences　are　found　due　to　the　mechanisms　of　the　single-carrier　event　(SCE)　in　short-channel　devices　but　the　multi-carrier　event　(MVE)　in　long-channel　devices.　The　results　are　helpful　for　the　physical　understanding　of　HCD　in　FinFET　devices.　©　2018　IEEE.