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Abstract:
叙述了真空静电封接技术的工艺过程,对封接结果做扫描电子显微镜(SEM)断面观察,并对封接件断面的元素浓度的深度分布用二次离子质谱分析器(SIMS)进行分析,提出了真空静电封接的类电容器结构的新模型.
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福州大学学报(自然科学版)
ISSN: 1000-2243
CN: 35-1337/N
Year: 2000
Issue: 2
Volume: 28
Page: 16-19
Cited Count:
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 2
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