Modern　electron-beam　lithography　(EBL)　suffers　from　the　long-range　fogging　effect　that　incurs　undesired　excessive　exposure　and　thus　layout　pattern　distortions.　In　this　article,　we　propose　an　analytical　placement　algorithm　to　tackle　the　fogging　effect.　The　underlying　idea　is　to　place　standard　cells,　guided　by　our　efficient,　yet　reasonably　accurate　fogging　effect　model,　to　minimize　the　fogging　variation　during　placement,　and　thus　the　effect　can　be　corrected　by　reducing　dosage　uniformly　over　the　chip.　We　derive　a　fogging　source　modeling　and　further　develop　an　efficient,　accurate　evaluation　scheme　to　estimate　the　fogging　effect　by　the　fast　Gauss　transform　with　the　Hermite　expansion.　The　scheme　achieves　a　30.2X　speedup　over　the　traditional　convolution　computation,　with　only　about　2.35%　absolute　average　errors,　which　enables　the　iterative　evaluation　and　variation　minimization　of　the　effect　during　global　placement.　We　also　develop　fogging-aware　legalization　and　detailed　placement　to　further　optimize　the　placement　quality,　while　limiting　fogging　variation.　The　experimental　results　show　that　our　algorithm　can　effectively　reduce　the　fogging　variation　by　35.4%,　while　maintaining　high　wirelength　quality,　at　reasonable　runtime.