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author:

Liu, Jiahui (Liu, Jiahui.) [1] | Yang, Zunxian (Yang, Zunxian.) [2] (Scholars:杨尊先) | Gong, Zhipeng (Gong, Zhipeng.) [3] | Shen, Zihong (Shen, Zihong.) [4] | Ye, Yuliang (Ye, Yuliang.) [5] | Yang, Baoyong (Yang, Baoyong.) [6] | Qiu, Yinglin (Qiu, Yinglin.) [7] | Ye, Bingqing (Ye, Bingqing.) [8] | Xu, Lei (Xu, Lei.) [9] | Guo, Tailiang (Guo, Tailiang.) [10] (Scholars:郭太良) | Xu, Sheng (Xu, Sheng.) [11] (Scholars:徐胜)

Indexed by:

EI SCIE

Abstract:

An artificial synaptic device that can provide color discrimination, image storage, and image recognition is highly required to mimic the human vision for biological robots. All-inorganic halide perovskites have attracted extensive attention for the reason of their high stability and favorable photoelectric properties. In this study, a light-stimulated synaptic phototransistor based on a CsPbBr3/organic semiconductor hybrid film is reported. The fabricated CsPbBr3 film exhibits an island structure, which reduces the hysteresis effectively and at the same time achieves a high specific detectivity of up to 2 x 10(15) Jones. The decay of the photocurrent can be delayed by changing the gate bias, which is essential for achieving high-performance light-stimulated synaptic devices. Due to the outstanding detectivity of the device, the obvious synaptic functions can be observed when triggered by a light signal with a power of 1.6 nW that is much weaker than previous most perovskite-based hybrid synaptic phototransistors under a low operating voltage of -1 V. The electrical power consumption of the device could be as low as 0.076 pJ when the power of light spike was 7.36 nW. Taking into account this characterization, with changing of light intensity or wavelength, the contrast of the image was enlarged, which can further promote the image recognition accuracy. More significantly, this CsPbBr3/TIPS hybrid film can be fabricated by facile and low-cost solution processes. This study indicates the great potential of solution-processed perovskite-based light-stimulated synapses for future artificial visual systems.

Keyword:

artificial visual systems islandlike perovskite film solution processes synaptic hybrid phototransistors weak light

Community:

  • [ 1 ] [Liu, Jiahui]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China
  • [ 2 ] [Yang, Zunxian]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China
  • [ 3 ] [Gong, Zhipeng]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China
  • [ 4 ] [Shen, Zihong]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China
  • [ 5 ] [Ye, Yuliang]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China
  • [ 6 ] [Yang, Baoyong]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China
  • [ 7 ] [Qiu, Yinglin]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China
  • [ 8 ] [Ye, Bingqing]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China
  • [ 9 ] [Xu, Lei]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China
  • [ 10 ] [Guo, Tailiang]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China
  • [ 11 ] [Xu, Sheng]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China
  • [ 12 ] [Yang, Zunxian]Fujian Sci & Technol Innovat Lab Optoelect Inform, Mindu Innovat Lab, Fuzhou 350108, Peoples R China
  • [ 13 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Inform, Mindu Innovat Lab, Fuzhou 350108, Peoples R China
  • [ 14 ] [Xu, Sheng]Fujian Sci & Technol Innovat Lab Optoelect Inform, Mindu Innovat Lab, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • 杨尊先

    [Yang, Zunxian]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China;;[Yang, Zunxian]Fujian Sci & Technol Innovat Lab Optoelect Inform, Mindu Innovat Lab, Fuzhou 350108, Peoples R China

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2021

Issue: 11

Volume: 13

Page: 13362-13371

1 0 . 3 8 3

JCR@2021

8 . 5 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:142

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 56

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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