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author:

Jia, Yi (Jia, Yi.) [1] | Deng, Hui (Deng, Hui.) [2] (Scholars:邓辉) | Lin, Xiao (Lin, Xiao.) [3] (Scholars:林霄) | Chen, Shenzhong (Chen, Shenzhong.) [4] | Xia, Yong (Xia, Yong.) [5] | Wu, Zhixu (Wu, Zhixu.) [6] | Yu, Jinling (Yu, Jinling.) [7] (Scholars:俞金玲) | Cheng, Shuying (Cheng, Shuying.) [8] (Scholars:程树英) | Lai, Yunfeng (Lai, Yunfeng.) [9] (Scholars:赖云锋)

Indexed by:

EI SCIE

Abstract:

Antimony sulfide (Sb2S3) with high absorption coefficient reveals great potential for photodetectors (PDs) in various fields of military and national economy. A new type of depleted Sb2S3 thin film photoconductive detector by using titanium dioxide (TiO2) interlayer with the structure of Au/(glass/TiO2:)Sb2S3/Au is designed. Compared with normal Au/Sb2S3/Au devices, the depleted Sb2S3 PDs obtain a higher switching ratio of 90, greatly enhancing responsivity and specific detectivity. Owing to the electric field of the depletion region, the response time significantly decreases from 23.2 to 0.6 ms. In addition, the anisotropic Sb2S3 film with [120] dominated horizontal orientation is suitable for polarized light detection. The peak-to-valley ratio of the depleted Sb2S3 PD reaches 1.3 at polarized light. The results and methods of this study are expected to expand the application of PDs based on Sb2S3 films.

Keyword:

(3) thin film photoconductive detectors depleted Sb photodetectors photoelectric response speed polarization S-2

Community:

  • [ 1 ] [Jia, Yi]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 2 ] [Deng, Hui]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 3 ] [Lin, Xiao]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 4 ] [Chen, Shenzhong]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 5 ] [Yu, Jinling]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 6 ] [Cheng, Shuying]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 7 ] [Lai, Yunfeng]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 8 ] [Deng, Hui]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China
  • [ 9 ] [Lin, Xiao]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China
  • [ 10 ] [Cheng, Shuying]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China
  • [ 11 ] [Lai, Yunfeng]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China
  • [ 12 ] [Xia, Yong]Nanchang Univ, Informat Engn Sch, Nanchang 330031, Jiangxi, Peoples R China
  • [ 13 ] [Wu, Zhixu]Nanchang Univ, Informat Engn Sch, Nanchang 330031, Jiangxi, Peoples R China
  • [ 14 ] [Cheng, Shuying]Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 213164, Peoples R China
  • [ 15 ] [Lai, Yunfeng]Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 213164, Peoples R China

Reprint 's Address:

  • 邓辉 赖云锋

    [Deng, Hui]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China;;[Lai, Yunfeng]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China;;[Deng, Hui]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China;;[Lai, Yunfeng]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China

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Source :

ADVANCED MATERIALS INTERFACES

ISSN: 2196-7350

Year: 2021

Issue: 2

Volume: 9

6 . 3 8 9

JCR@2021

4 . 3 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:142

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 23

SCOPUS Cited Count: 19

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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