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author:

Wu, Jianxin (Wu, Jianxin.) [1] | Ye, Weixi (Ye, Weixi.) [2] | Lin, Jiaming (Lin, Jiaming.) [3] | Zhang, Xianghong (Zhang, Xianghong.) [4] | Zeng, Bangyan (Zeng, Bangyan.) [5] | Fan, Yuyang (Fan, Yuyang.) [6] | Guo, Tailiang (Guo, Tailiang.) [7] (Scholars:郭太良) | Chen, Huipeng (Chen, Huipeng.) [8] (Scholars:陈惠鹏)

Indexed by:

EI Scopus SCIE

Abstract:

Recently, artificial neurons have attracted much attention due to their excellent energy efficiency and scalability. However, there are still few reports on the regulation of the performance of artificial neuron based on single device. In the letter, we present an artificial neuron device based on Ag/TaOx/Si that not only has excellent turn-on and turn-off performance, but also exhibits sustained stability under multiple cycle tests. Moreover, the Integrate -and-Fire (IF) neuron model is successfully simulated at room temperature. More importantly, we find that an increase of temperature could reduce the threshold voltage and reset voltage of neurons, improve the probability of neuronal firing, and promote the transformation of neurons from nonvolatile to volatile. This work provides an effective method for regulating artificial neurons and has important implications for studying information transfer in biology and adapting complex computations in a memory computing framework.

Keyword:

Artificial neuron Electrodes Firing firing probability Neurons Performance evaluation Silicon Temperature distribution temperature modulation Threshold voltage

Community:

  • [ 1 ] [Wu, Jianxin]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 2 ] [Ye, Weixi]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 3 ] [Lin, Jiaming]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 4 ] [Zhang, Xianghong]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 5 ] [Zeng, Bangyan]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 6 ] [Fan, Yuyang]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 7 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 8 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 9 ] [Wu, Jianxin]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 10 ] [Ye, Weixi]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 11 ] [Lin, Jiaming]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 12 ] [Zhang, Xianghong]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 13 ] [Zeng, Bangyan]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 14 ] [Fan, Yuyang]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 15 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China
  • [ 16 ] [Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350100, Peoples R China

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Source :

IEEE ELECTRON DEVICE LETTERS

ISSN: 0741-3106

Year: 2022

Issue: 11

Volume: 43

Page: 2001-2004

4 . 9

JCR@2022

4 . 1 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:66

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 7

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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