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author：

Zhou, P.-K. (Zhou, P.-K..) [1] | Lin, X.-L. (Lin, X.-L..) [2] | Yang, H.-L. (Yang, H.-L..) [3] | Chen, B.-J. (Chen, B.-J..) [4] | Li, H.-H. (Li, H.-H..) [5] | Chen, Z.-R. (Chen, Z.-R..) [6] | Zheng, S.-T. (Zheng, S.-T..) [7]

Indexed by：

Scopus

Abstract：

The　searching　for　green　memristor　with　good　environmental　robustness　will　be　significant　for　next　generation　biodegradable　devices.　In　this　work,　bio-compatible　and　non-toxic　polydopamine　(PDA)　was　prepared　by　self-polymerization　of　dopamine　in　simple　aqueous　solution,　which　was　protonated　by　different　acid　concentrations　(3–12　M　HCl)　and　further　fabricated　as　memory　devices　with　structures　of　FTO/PDA/Ag.　The　ON/OFF　ratio　are　enhanced　gradually　from　2.80　×　102　(PDA-3　M),　8.39　×　102　(PDA-6　M),　5.18　×　103　(PDA-9　M)　to　2.41　×　104　(PDA-12　M).　The　lower　conjugated　degree,　the　closer　lattice　packing　and　the　less　radicals　after　acid　treatment　are　the　reasons　for　the　enhanced　bipolar　resistive　switching　performances　of　protonated　PDA-based　memristor.　The　resistive　switching　mechanism　is　the　conductive　filament　with　three　processes　of　Ohm,　space　charge　limited　conduction　(SCLC)　and　trap-filled　limited　(TFL).　In　addition,　the　FTO/PDA-12　M/Ag　exhibit　good　environmental　robustness,　including　thermal　(100　°C)　and　ionizing　irradiation　(UV　exposure　for　96　h).　In　all,　the　facial　protonation　treatment　and　the　simple　sandwich　device　structures　together　with　good　environmental　robustness　endow　its　promising　applications　in　as　green,　stable　and　biodegradable　next　generation　electron　devices.　©　2022　Elsevier　B.V.

Keyword：

Environmental robustness Green memristor Protonated polydopamine Resistive switching mechanism

Community：

  • [ 1 ] [Zhou, P.-K.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 2 ] [Zhou, P.-K.]Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 3 ] [Lin, X.-L.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 4 ] [Lin, X.-L.]Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 5 ] [Yang, H.-L.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 6 ] [Yang, H.-L.]Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 7 ] [Chen, B.-J.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 8 ] [Chen, B.-J.]Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 9 ] [Li, H.-H.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 10 ] [Li, H.-H.]Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 11 ] [Li, H.-H.]Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 12 ] [Li, H.-H.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350108, China
  • [ 13 ] [Chen, Z.-R.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 14 ] [Chen, Z.-R.]Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 15 ] [Chen, Z.-R.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350108, China
  • [ 16 ] [Zheng, S.-T.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 17 ] [Zheng, S.-T.]Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, Fuzhou University, Fujian, Fuzhou, 350108, China

Reprint 's Address：

  • [Li, H.-H.]College of Chemistry, Fujian, China

Email：


lihh@fzu.edu.cn
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Source ：

Journal of Alloys and Compounds

ISSN： 0925-8388

Year： 2022

Volume： 925

6 . 2

JCR@2022

5 . 8 0 0

JCR@2023

ESI HC Threshold：91

JCR Journal Grade：1

CAS Journal Grade：1

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 2

Affiliated Colleges：

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