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author:

Zhou, Pan-Ke (Zhou, Pan-Ke.) [1] | Lin, Xiao-Li (Lin, Xiao-Li.) [2] | Yang, Hai-Long (Yang, Hai-Long.) [3] | Chen, Bin-Jun (Chen, Bin-Jun.) [4] | Li, Hao-Hong (Li, Hao-Hong.) [5] (Scholars:李浩宏) | Chen, Zhi-Rong (Chen, Zhi-Rong.) [6] (Scholars:陈之荣) | Zheng, Shou-Tian (Zheng, Shou-Tian.) [7] (Scholars:郑寿添)

Indexed by:

EI Scopus SCIE

Abstract:

The searching for green memristor with good environmental robustness will be significant for next gen-eration biodegradable devices. In this work, bio-compatible and non-toxic polydopamine (PDA) was pre-pared by self-polymerization of dopamine in simple aqueous solution, which was protonated by different acid concentrations (3-12 M HCl) and further fabricated as memory devices with structures of FTO/PDA/Ag. The ON/OFF ratio are enhanced gradually from 2.80 x 102 (PDA-3 M), 8.39 x 102 (PDA-6 M), 5.18 x 103 (PDA-9 M) to 2.41 x 104 (PDA-12 M). The lower conjugated degree, the closer lattice packing and the less radicals after acid treatment are the reasons for the enhanced bipolar resistive switching performances of proto-nated PDA-based memristor. The resistive switching mechanism is the conductive filament with three processes of Ohm, space charge limited conduction (SCLC) and trap-filled limited (TFL). In addition, the FTO/ PDA-12 M/Ag exhibit good environmental robustness, including thermal (100 degrees C) and ionizing irradiation (UV exposure for 96 h). In all, the facial protonation treatment and the simple sandwich device structures together with good environmental robustness endow its promising applications in as green, stable and biodegradable next generation electron devices. (c) 2022 Elsevier B.V. All rights reserved.

Keyword:

Environmental robustness Green memristor Protonated polydopamine Resistive switching mechanism

Community:

  • [ 1 ] [Zhou, Pan-Ke]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 2 ] [Lin, Xiao-Li]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 3 ] [Yang, Hai-Long]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 4 ] [Chen, Bin-Jun]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 5 ] [Li, Hao-Hong]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 6 ] [Chen, Zhi-Rong]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 7 ] [Zheng, Shou-Tian]Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 8 ] [Li, Hao-Hong]Fuzhou Univ, Fujian Engn Res Ctr Adv Mfg Technol Fine Chem, Fuzhou 350108, Fujian, Peoples R China
  • [ 9 ] [Zhou, Pan-Ke]Fuzhou Univ, Fujian Prov Key Lab Adv Inorgan Oxygenated Mat, Fuzhou 350108, Fujian, Peoples R China
  • [ 10 ] [Lin, Xiao-Li]Fuzhou Univ, Fujian Prov Key Lab Adv Inorgan Oxygenated Mat, Fuzhou 350108, Fujian, Peoples R China
  • [ 11 ] [Yang, Hai-Long]Fuzhou Univ, Fujian Prov Key Lab Adv Inorgan Oxygenated Mat, Fuzhou 350108, Fujian, Peoples R China
  • [ 12 ] [Chen, Bin-Jun]Fuzhou Univ, Fujian Prov Key Lab Adv Inorgan Oxygenated Mat, Fuzhou 350108, Fujian, Peoples R China
  • [ 13 ] [Li, Hao-Hong]Fuzhou Univ, Fujian Prov Key Lab Adv Inorgan Oxygenated Mat, Fuzhou 350108, Fujian, Peoples R China
  • [ 14 ] [Chen, Zhi-Rong]Fuzhou Univ, Fujian Prov Key Lab Adv Inorgan Oxygenated Mat, Fuzhou 350108, Fujian, Peoples R China
  • [ 15 ] [Zheng, Shou-Tian]Fuzhou Univ, Fujian Prov Key Lab Adv Inorgan Oxygenated Mat, Fuzhou 350108, Fujian, Peoples R China
  • [ 16 ] [Li, Hao-Hong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 17 ] [Chen, Zhi-Rong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China

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Source :

JOURNAL OF ALLOYS AND COMPOUNDS

ISSN: 0925-8388

Year: 2022

Volume: 925

6 . 2

JCR@2022

5 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:91

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 16

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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