The　coming　big-data　era　has　created　a　huge　demand　for　next-generation　memory　technologies　with　characters　of　higher　data-storage　densities,　faster　access　speeds,　lower　power　consumption　and　better　environmental　compatibility.　In　this　field,　the　design　of　resistive　switching　active　materials　is　pivotal　but　challengeable.　Polyoxometalates　(POMs)　are　promising　candidates　for　next-generation　molecular　memristors　due　to　their　versatile　redox　characters,　excellent　electron　reservoirs　and　good　compatibility/convenience　in　microelectronics　processing.　In　this　review,　five　kinds　of　POM-based　active　materials　in　nonvolatile　memories　(inorganic　POMs,　crystalline　organic-inorganic　hybrid　POMOFs,　polymer　modified　POMs,　POM/transition　metal　oxides　composites　and　the　deposition　of　POM　on　metal　surfaces)　were　described.　The　components　of　POMs　active　materials,　device　fabrications,　device　parameters,　and　resistive　switching　mechanisms　relative　to　their　structures　were　summarized.　Finally,　challenges　and　future　perspectives　of　POMs-based　memristors　were　also　presented.