• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

Bai, Jieyu (Bai, Jieyu.) [1] | Hu, Hailong (Hu, Hailong.) [2] (Scholars:胡海龙) | Yu, Yongshen (Yu, Yongshen.) [3] | Zhu, Yangbin (Zhu, Yangbin.) [4] | Xu, Zhongwei (Xu, Zhongwei.) [5] (Scholars:徐中炜) | Zheng, Wenchen (Zheng, Wenchen.) [6] | Zhao, Haobing (Zhao, Haobing.) [7] | Lin, Lihua (Lin, Lihua.) [8] (Scholars:林丽华) | Guo, Tailiang (Guo, Tailiang.) [9] (Scholars:郭太良) | Li, Fushan (Li, Fushan.) [10] (Scholars:李福山)

Indexed by:

EI Scopus SCIE

Abstract:

InP quantum dots (QDs) are considered to be one of the most promising materials for application in light-emitting devices due to the advantages of heavy-metal-free characteristic and widely tunable spectrum covering most of the visible and near-infrared regions. However, the performance of InP quantum dot light-emitting diodes (QLEDs) lags far behind their Cd-containing counterparts, especially as the InP pixelated de-vice is still in its infancy. In this study, multi-component functional QD inks with excellent stability and print-ability was developed for inkjet printing InP array QLEDs. High-quality QD films can be obtained, both on flat and bank-containing substrates, by precisely controlling the competition between capillary and Marangoni flows in the printed droplets, enabling high device performance. In addition, a periodic ZnO microlens arrays was prepared by nanoimprinting technology to enhance the light extraction efficiency of inkjet-printed InP QLEDs, leading to 127.6% improvement in external quantum efficiency (EQE) compared to the control device. The maximum luminance, EQE and current efficiency of the obtained device are 17,759 cd/m2, 8.1% and 11.1 cd/A, respectively. These results may facilitate the applications of high performance environment-friendly QLEDs by inkjet printing technology.

Keyword:

Inkjet printing InP quantum dots Light extraction QLEDs

Community:

  • [ 1 ] [Bai, Jieyu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Hu, Hailong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Yu, Yongshen]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Zhu, Yangbin]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Xu, Zhongwei]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Zheng, Wenchen]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Zhao, Haobing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 8 ] [Lin, Lihua]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 9 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 10 ] [Li, Fushan]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • [Hu, Hailong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Li, Fushan]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;

Show more details

Related Keywords:

Source :

ORGANIC ELECTRONICS

ISSN: 1566-1199

Year: 2023

Volume: 113

2 . 7

JCR@2023

2 . 7 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:30

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 11

SCOPUS Cited Count: 12

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

Online/Total:57/10047467
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1