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author:

Chen, Gengxu (Chen, Gengxu.) [1] (Scholars:陈耿旭) | Yu, Xipeng (Yu, Xipeng.) [2] | Gao, Changsong (Gao, Changsong.) [3] | Dai, Yan (Dai, Yan.) [4] | Hao, Yanxue (Hao, Yanxue.) [5] | Yu, Rengjian (Yu, Rengjian.) [6] | Chen, Huipeng (Chen, Huipeng.) [7] (Scholars:陈惠鹏) | Guo, Tailiang (Guo, Tailiang.) [8] (Scholars:郭太良)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

Multi-sensory neuromorphic devices (MND) have broad potential in overcoming the structural bottleneck of von Neumann in the era of big data. However, the current multisensory artificial neuromorphic system is mainly based on unitary nonvolatile memory or volatile synaptic devices without intrinsic thermal sensitivity, which limits the range of biological multisensory perception and the flexibility and computational efficiency of the neural morphological computing system. Here, a temperature-dependent memory/synaptic hybrid artificial neuromorphic device based on floating gate phototransistors (FGT) is fabricated. The CsPbBr3/TiO2 core-shell nanocrystals (NCs) prepared by in-situ pre-protection low-temperature solvothermal method were used as the photosensitive layer. The device exhibits remarkable multi-level visual memory with a large memory window of 59.6 V at room temperature. Surprisingly, when the temperature varies from 20 to 120 & DEG;C back and forth, the device can switch between nonvolatile memory and volatile synaptic device with reconfigurable and reversible behaviors, which contributes to the efficient visual/thermal fusion perception. This work expands the sensory range of multisensory devices and promotes the development of memory and neuromorphic devices based on organic field-effect transistors (OFET).

Keyword:

floating gate phototransistors multisensory neuromorphic devices perovskite nanocrystals temperature

Community:

  • [ 1 ] [Chen, Gengxu]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China
  • [ 2 ] [Yu, Xipeng]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China
  • [ 3 ] [Gao, Changsong]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China
  • [ 4 ] [Dai, Yan]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China
  • [ 5 ] [Hao, Yanxue]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China
  • [ 6 ] [Yu, Rengjian]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China
  • [ 7 ] [Chen, Huipeng]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China
  • [ 8 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China
  • [ 9 ] [Chen, Gengxu]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 10 ] [Yu, Xipeng]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 11 ] [Gao, Changsong]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 12 ] [Dai, Yan]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 13 ] [Hao, Yanxue]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 14 ] [Yu, Rengjian]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 15 ] [Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 16 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China

Reprint 's Address:

  • [Chen, Gengxu]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China;;[Chen, Huipeng]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China;;[Chen, Gengxu]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China;;[Chen, Huipeng]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China;;

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Source :

NANO RESEARCH

ISSN: 1998-0124

Year: 2023

Issue: 5

Volume: 16

Page: 7661-7670

9 . 6

JCR@2023

9 . 6 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:30

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 19

SCOPUS Cited Count: 18

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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