Perovskite　quantum　dots　(PQDs)　are　promising　in　the　fieldof　light-emittingdiodes　(LEDs)　due　to　their　adjustable　band　gap,　high　photoluminescencequantum　yield,　and　high　color　purity.　However,　ion　migration　is　proneto　occur　in　the　device　due　to　the　structural　instability　of　PQDs,resulting　in　the　degradation　of　external　quantum　efficiency.　In　thiswork,　we　proposed　a　strategy　to　realize　a　perovskite　quantum　dot　light-emittingmemcapacitor　(PQLEM)　so　as　to　enhance　the　electroluminescent　performanceof　PQDs.　By　varying　the　pre-bias　voltage　and　time,　the　ion　distributionand　trap　density　in　the　PQD　film　could　be　modified,　thereby　affectingthe　capacitance　value　and　luminous　efficiency　of　the　device.　Underthe　memcapacitive　effect,　the　external　quantum　efficiency　(EQE)　ofthe　device　increases　from　an　initial　2.81　to　7.95%.　This　work　providesa　route　for　achieving　perovskite　quantum　dot　light-emitting　deviceswith　high　luminous　efficiency.