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author:

Zhu, Yangbin (Zhu, Yangbin.) [1] | Xu, Rui (Xu, Rui.) [2] | Zhou, Yuangui (Zhou, Yuangui.) [3] | Xu, Zhongwei (Xu, Zhongwei.) [4] (Scholars:徐中炜) | Liu, Yang (Liu, Yang.) [5] | Tian, Fengqing (Tian, Fengqing.) [6] | Zheng, Xiaojing (Zheng, Xiaojing.) [7] | Tian, Fumin (Tian, Fumin.) [8] | Alsharafi, Rashed (Alsharafi, Rashed.) [9] | Hu, Hailong (Hu, Hailong.) [10] (Scholars:胡海龙) | Guo, Tailiang (Guo, Tailiang.) [11] (Scholars:郭太良) | Kim, Tae Whan (Kim, Tae Whan.) [12] | Li, Fushan (Li, Fushan.) [13] (Scholars:李福山)

Indexed by:

Scopus SCIE

Abstract:

Achieving efficient white quantum dot light-emitting diodes (WQLEDs) is highly desired because of their promising applications in general illumination and display backlight systems. Herein, a highly efficient WQLED with an extremely low input voltage is reported, which is fabricated via an all-solution process by using an emitting layer with a mixture of red-, blue-, and green-emitting quantum dots. When a facile strategy of light outcoupling with an optical lens is introduced, the device shows a maximum external quantum efficiency of 28.4%, which is the highest value reported so far. Moreover, the device exhibits a standard white emission with International Commission on Illumination (CIE) coordinates of (0.36, 0.34) at an extremely low input voltage of 3.2 V. This work provides a promising way for achieving high-performance white quantum-dot light-emitting diodes with low driving voltage.

Keyword:

efficiency high&#8208 light outcoupling low voltage quantum dots white light

Community:

  • [ 1 ] [Zhu, Yangbin]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 2 ] [Xu, Zhongwei]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 3 ] [Liu, Yang]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 4 ] [Tian, Fengqing]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 5 ] [Zheng, Xiaojing]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 6 ] [Tian, Fumin]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 7 ] [Alsharafi, Rashed]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 8 ] [Hu, Hailong]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 9 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 10 ] [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 11 ] [Xu, Rui]Fuzhou Superlattice Sci & Technol Co Ltd, Fuzhou 350116, Peoples R China
  • [ 12 ] [Zhou, Yuangui]Fuzhou Superlattice Sci & Technol Co Ltd, Fuzhou 350116, Peoples R China
  • [ 13 ] [Kim, Tae Whan]Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea

Reprint 's Address:

  • 李福山

    [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China

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Source :

ADVANCED OPTICAL MATERIALS

ISSN: 2195-1071

Year: 2020

Issue: 24

Volume: 8

9 . 9 2 6

JCR@2020

8 . 0 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:196

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 34

SCOPUS Cited Count: 32

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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