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author:

Cai, Junhu (Cai, Junhu.) [1] | Chen, Xiaogang (Chen, Xiaogang.) [2] | Zhang, Wenyan (Zhang, Wenyan.) [3] | Yang, Longwen (Yang, Longwen.) [4] | Lin, Zexi (Lin, Zexi.) [5] | Zhao, Wenxiao (Zhao, Wenxiao.) [6] | Ye, Yun (Ye, Yun.) [7] (Scholars:叶芸) | Xu, Sheng (Xu, Sheng.) [8] (Scholars:徐胜) | Guo, Tailiang (Guo, Tailiang.) [9] (Scholars:郭太良) | Chen, Enguo (Chen, Enguo.) [10] (Scholars:陈恩果)

Indexed by:

Scopus SCIE

Abstract:

Owing to their composition-tunable and narrow emissions and high photoluminescence quantum yield (PLQY), inorganic halide perovskite quantum dots (IPQDs) are a promising option for wide color gamut displays. However, their practical applications have been limited by their lattice structure instability and surface defect states. Herein, CsPbBr3:KBF4@SiO2 with improved stability and optical properties is successfully synthesized with a two-step optimization of fluorine (F) anion doping and SiO2 in situ coating. Compared with bromide (Br), higher electronegativity and a smaller radius of F lead to stronger binding energy with Pb2+. Also, F anions can occupy surface Br vacancies. Then, benefiting from the acidic environment provided by BF4- hydrolysis, tetraethyl orthosilicate (TEOS) can be more easily hydrolyzed on the CsPbBr3:KBF4 surface to generate SiO2 coating, thus further passivating lattice defects and improving environmental stability. Importantly, the PLQY of CsPbBr3:KBF4@SiO2 achieves 85%, and the stability has been greatly improved compared with pure CsPbBr3. Finally, CsPbBr3:KBF4@SiO2/PDMS, CsPbI3/PDMS, and CsPbCl3/PDMS composites with narrow emissions are applied to replace traditional phosphors as color converters for direct-view light-emitting diode (LED) displays or liquid crystal display (LCD) backlights. The color gamut reaches 118.22% under the NTSC standard. Concerning the display field, it suggests likely applications in the future.

Keyword:

CsPbBr3 KBF4 LED displays liquid crystal displays SiO2 wide color gamut

Community:

  • [ 1 ] [Cai, Junhu]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engineer Lab Flat Panel Displa, Fuzhou 350108, Peoples R China
  • [ 2 ] [Chen, Xiaogang]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engineer Lab Flat Panel Displa, Fuzhou 350108, Peoples R China
  • [ 3 ] [Zhang, Wenyan]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engineer Lab Flat Panel Displa, Fuzhou 350108, Peoples R China
  • [ 4 ] [Yang, Longwen]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engineer Lab Flat Panel Displa, Fuzhou 350108, Peoples R China
  • [ 5 ] [Lin, Zexi]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engineer Lab Flat Panel Displa, Fuzhou 350108, Peoples R China
  • [ 6 ] [Zhao, Wenxiao]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engineer Lab Flat Panel Displa, Fuzhou 350108, Peoples R China
  • [ 7 ] [Ye, Yun]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engineer Lab Flat Panel Displa, Fuzhou 350108, Peoples R China
  • [ 8 ] [Xu, Sheng]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engineer Lab Flat Panel Displa, Fuzhou 350108, Peoples R China
  • [ 9 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engineer Lab Flat Panel Displa, Fuzhou 350108, Peoples R China
  • [ 10 ] [Chen, Enguo]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engineer Lab Flat Panel Displa, Fuzhou 350108, Peoples R China
  • [ 11 ] [Ye, Yun]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 12 ] [Xu, Sheng]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 13 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 14 ] [Chen, Enguo]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China

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Source :

PHOTONICS

ISSN: 2304-6732

Year: 2023

Issue: 10

Volume: 10

2 . 1

JCR@2023

2 . 1 0 0

JCR@2023

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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