Quantum　dot　(QD)　light-emitting　devices　operating　in　non-carrier-injection　electroluminescence　(NCI-QDEL)　mode　have　attracted　attention　due　to　their　extremely　simple　structure　and　excellent　stability.　However,　the　working　mechanisms　of　the　QD-based　NCI-QDEL　still　require　further　improvement,　especially　regarding　the　transfer　process　of　charges　between　QDs.　Noting　that　there　are　plenty　of　salt　compounds　and　organic　ligands　between　QDs　during　the　solution　synthesis,　which　must　have　an　influence　on　the　device　performance　by　impacting　the　charge　transfer　process.　Thus,　it　is　necessary　to　reveal　effect　of　the　QD　surrounding　states　on　the　NCI-QDEL　performance.　In　this　work,　effect　of　the　purification　process　on　the　surrounding　states　of　QDs　is　investigated,　and　the　charge　transfer　process　is　elucidated　according　to　the　NCI-QDEL　performance.　It　is　found　that　a　moderate　energy　barrier　between　QDs　is　helpful　to　improve　NCI-QDEL.　We　propose　a　working　mode　of　the　QD-based　NCI-QDEL,　in　which　the　salt　compounds　and　organic　ligands　between　QDs　are　equivalent　to　QD-QD　energy　barriers　that　can　adjust　the　charge　transfer　process　and　increase　the　electron-hole　overlap　probability.　We　believe　that　this　work　can　provide　guidance　for　the　design　and　fabrication　of　QDs　suitable　for　NCI　devices.