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author:

Xia, Tianwen (Xia, Tianwen.) [1] | Wang, Le (Wang, Le.) [2] | Chen, Enguo (Chen, Enguo.) [3] (Scholars:陈恩果) | Huang, Zhonghang (Huang, Zhonghang.) [4] | Yan, Chunli (Yan, Chunli.) [5] | Wu, Dalei (Wu, Dalei.) [6] | Yan, Q. Frank (Yan, Q. Frank.) [7] | Sun, Jie (Sun, Jie.) [8] (Scholars:孙捷)

Indexed by:

EI Scopus SCIE

Abstract:

Earlier researchers have designed nanostructures such as stripe gratings (SG) or photonic crystals array (PhCA) to improve the light extraction efficiency (LEE) of light-emitting diodes (LEDs) by the diffraction mechanism. However, through k-domain method and simulation analysis, this letter finds that although SG perform well in 2D simulation, their effect drops sharply in 3D space, a phenomenon being overlooked in the community. This letter explains the diffraction mechanism of LEDs with nanostructure in 2D and 3D space through K-domain analysis, and reveals the inaccuracy of simulating LED with SG in 2D space. Unlike SG, PhCA offers diffraction in two directions and may be more suitable for LEDs.

Keyword:

k-domain method Light-emitting diodes nanostructures

Community:

  • [ 1 ] [Xia, Tianwen]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Chen, Enguo]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Huang, Zhonghang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Wu, Dalei]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Yan, Q. Frank]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Sun, Jie]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Xia, Tianwen]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 8 ] [Chen, Enguo]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 9 ] [Huang, Zhonghang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 10 ] [Wu, Dalei]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 11 ] [Yan, Q. Frank]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 12 ] [Sun, Jie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 13 ] [Wang, Le]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 14 ] [Yan, Chunli]Lib Fuzhou Univ, Dept Informat & Automat, Fuzhou 350108, Peoples R China
  • [ 15 ] [Sun, Jie]Chalmers Univ Technol, Dept Microtechnol & Nanosci, Lab Quantum Device Phys, S-41296 Gothenburg, Sweden

Reprint 's Address:

  • 陈恩果 黄忠航 孙捷

    [Chen, Enguo]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Huang, Zhonghang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Sun, Jie]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China

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Source :

IEEE JOURNAL OF QUANTUM ELECTRONICS

ISSN: 0018-9197

Year: 2024

Issue: 3

Volume: 60

2 . 2 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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