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author:

Lin, P. (Lin, P..) [1] | Yang, Y. (Yang, Y..) [2] | Gong, Y. (Gong, Y..) [3] | Zheng, A. (Zheng, A..) [4] | Li, T. (Li, T..) [5] | Hu, Q. (Hu, Q..) [6] | Wu, Y. (Wu, Y..) [7] | Peng, L.-M. (Peng, L.-M..) [8] | Kang, J. (Kang, J..) [9]

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Scopus

Abstract:

In thin-film transistors (TFTs), issues such as interface states may lead to unstable device performance and complex physical phenomena, such as frequency dispersion effects. This paper establishes a three-terminal TFT compact model capable of replicating capacitance dispersion phenomena and directly applying to SPICE circuit simulations. The model decomposes the transistor's capacitance frequency response into the superposition of responses from different electronic states. The different electronic states are emulated by parallel branches, each composed of voltage-dependent capacitance and resistance connected in series. The Powell algorithm is employed to achieve automatic parameter optimization. The model is generic for TFTs and successfully replicates capacitance dispersion phenomena in carbon nanotube (CNT) and indium-gallium-zinc-oxide (IGZO) thin-film transistors. This work provides insights to the circuit behavior of display driver circuits at high frequencies and improving circuit reliability. © 2024 John Wiley and Sons Inc. All rights reserved.

Keyword:

Capacitance frequency dispersion carbon nanotube (CNT) compact model indium gallium zinc oxide (IGZO) pulse width modulation (PWM) thin-film transistor (TFT)

Community:

  • [ 1 ] [Lin P.]Research Center for Carbon-based Electronics, Peking University, Beijing, China
  • [ 2 ] [Yang Y.]School of Integrated Circuits, Peking University, Beijing, China
  • [ 3 ] [Yang Y.]FZU-Jinjiang Joint Institute of Microelectronics, Fuzhou University, Jinjiang, China
  • [ 4 ] [Gong Y.]Research Center for Carbon-based Electronics, Peking University, Beijing, China
  • [ 5 ] [Zheng A.]Research Center for Carbon-based Electronics, Peking University, Beijing, China
  • [ 6 ] [Li T.]FZU-Jinjiang Joint Institute of Microelectronics, Fuzhou University, Jinjiang, China
  • [ 7 ] [Hu Q.]Research Center for Carbon-based Electronics, Peking University, Beijing, China
  • [ 8 ] [Wu Y.]School of Integrated Circuits, Peking University, Beijing, China
  • [ 9 ] [Peng L.-M.]Research Center for Carbon-based Electronics, Peking University, Beijing, China
  • [ 10 ] [Kang J.]Research Center for Carbon-based Electronics, Peking University, Beijing, China
  • [ 11 ] [Kang J.]Institute of Carbon-based Thin Film Electronics, PKU-Shanxi, Taiyuan, China

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ISSN: 0097-966X

Year: 2024

Issue: S1

Volume: 55

Page: 84-87

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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